发明申请
- 专利标题： SEMICONDUCTOR LASER DEVICE AND METHOD OF FABRICATING THE SAME
- 专利标题（中）： 半导体激光器件及其制造方法
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申请号： US12492517申请日： 2009-06-26
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公开(公告)号： US20090262772A1公开(公告)日： 2009-10-22
- 发明人: Tsutomu Yamaguchi , Masayuki Hata , Takashi Kano , Masayuki Shono , Hiroki Ohbo , Yasuhiko Nomura , Hiroaki Izu
- 申请人： Tsutomu Yamaguchi , Masayuki Hata , Takashi Kano , Masayuki Shono , Hiroki Ohbo , Yasuhiko Nomura , Hiroaki Izu
- 申请人地址： JP Osaka
- 专利权人： Sanyo Electric Co., Ltd.
- 当前专利权人： Sanyo Electric Co., Ltd.
- 当前专利权人地址： JP Osaka
- 优先权： JPJP2005-103049 20050331
- 主分类号： H01S5/00
- IPC分类号： H01S5/00 ; H01L33/00
摘要：
A semiconductor laser device capable of reducing the threshold current and improving luminous efficiency and a method of fabricating the same are obtained. This semiconductor laser device comprises a semiconductor substrate having a principal surface and a semiconductor element layer, formed on the principal surface of the semiconductor substrate, having a principal surface substantially inclined with respect to the principal surface of the semiconductor substrate and including an emission layer.