发明申请
- 专利标题: ATOMIC LAYER GROWING APPARATUS
- 专利标题(中): 原子层生长装置
-
申请号: US12295194申请日: 2007-03-28
-
公开(公告)号: US20090266296A1公开(公告)日: 2009-10-29
- 发明人: Hiroyuki Tachibana , Kazutoshi Murata , Nozomu Hattori
- 申请人: Hiroyuki Tachibana , Kazutoshi Murata , Nozomu Hattori
- 优先权: JP2006-094466 20060330
- 国际申请: PCT/JP2007/056622 WO 20070328
- 主分类号: C23C16/54
- IPC分类号: C23C16/54
摘要:
An atomic layer growing apparatus includes a film forming chamber (101) in which the vapor phase growth of a film is performed, a substrate table (102) having a heating mechanism accommodated in the film forming chamber (101), and an exhaust mechanism (104). The atomic layer growing apparatus also includes a material supply unit (105) including a material vaporizer (151), two buffer tanks, i.e., a buffer tank A (152a) and buffer tank B (152b), a fill valve A (153a) and supply valve A (154a) of the buffer tank A (152a), a fill valve B (153b) and supply valve B (154b) of the buffer tank B (152b), an injection control valve (155), and a control unit (156) which controls the opening/closing of each valve.
公开/授权文献
- US08202367B2 Atomic layer growing apparatus 公开/授权日:2012-06-19