-
公开(公告)号：US08202367B2
公开(公告)日：2012-06-19
申请号：US12295194
申请日：2007-03-28
IPC分类号： C23C16/54
CPC分类号： C23C16/45544 , C23C16/4485
摘要： An atomic layer growing apparatus includes a film forming chamber (101) in which the vapor phase growth of a film is performed, a substrate table (102) having a heating mechanism accommodated in the film forming chamber (101), and an exhaust mechanism (104). The atomic layer growing apparatus also includes a material supply unit (105) including a material vaporizer (151), two buffer tanks, i.e., a buffer tank A (152a) and buffer tank B (152b), a fill valve A (153a) and supply valve A (154a) of the buffer tank A (152a), a fill valve B (153b) and supply valve B (154b) of the buffer tank B (152b), an injection control valve (155), and a control unit (156) which controls the opening/closing of each valve.
摘要翻译： 原子层生长装置包括其中进行膜的气相生长的成膜室（101），具有容纳在成膜室（101）中的加热机构的基板台（102）和排气机构 104）。 原子层生长装置还包括材料供给单元（105），其包括材料蒸发器（151），两个缓冲罐，即缓冲罐A（152a）和缓冲罐B（152b），填充阀A（153a） 缓冲罐B（152a）的缓冲罐A（152a）的供给阀A（154a），缓冲罐B（152b）的填充阀B（153b）和供给阀B（154b），喷射控制阀（155） 单元（156），其控制每个阀的打开/关闭。
-
公开(公告)号：US20090291232A1
公开(公告)日：2009-11-26
申请号：US12294428
申请日：2007-03-28
CPC分类号： C23C16/402 , C23C16/45542 , C23C16/5096 , H01L21/02164 , H01L21/02222 , H01L21/02274 , H01L21/0228 , H01L21/3141 , H01L21/31612
摘要： Oxygen gas, for example, is introduced into a film forming chamber, and high-frequency power is supplied to a plurality of monopole antennas arranged above a silicon substrate (101) in the film forming chamber to generate a plasma of the introduced oxygen gas, thereby supplying atomic oxygen (123) onto the surface of an aminosilane molecular layer (102). This plasma generation is performed for about 1 sec. With this operation, the adsorption layer (102) adsorbed onto the surface of the silicon substrate (101) is oxidized, thereby forming a silicon oxide layer (112) corresponding to one atomic layer of silicon on the surface of the silicon substrate (101).
摘要翻译： 例如，将氧气引入成膜室，向成膜室内的硅基板（101）上方配置的多个单极天线供给高频电力，生成引入氧气的等离子体， 从而将原子氧（123）提供到氨基硅烷分子层（102）的表面上。 执行该等离子体生成约1秒。 通过该操作，吸附在硅衬底（101）的表面上的吸附层（102）被氧化，从而在硅衬底（101）的表面上形成对应于一个原子层硅的氧化硅层（112） 。
-
公开(公告)号：US20090266296A1
公开(公告)日：2009-10-29
申请号：US12295194
申请日：2007-03-28
IPC分类号： C23C16/54
CPC分类号： C23C16/45544 , C23C16/4485
摘要： An atomic layer growing apparatus includes a film forming chamber (101) in which the vapor phase growth of a film is performed, a substrate table (102) having a heating mechanism accommodated in the film forming chamber (101), and an exhaust mechanism (104). The atomic layer growing apparatus also includes a material supply unit (105) including a material vaporizer (151), two buffer tanks, i.e., a buffer tank A (152a) and buffer tank B (152b), a fill valve A (153a) and supply valve A (154a) of the buffer tank A (152a), a fill valve B (153b) and supply valve B (154b) of the buffer tank B (152b), an injection control valve (155), and a control unit (156) which controls the opening/closing of each valve.
摘要翻译： 原子层生长装置包括其中进行膜的气相生长的成膜室（101），具有容纳在成膜室（101）中的加热机构的基板台（102）和排气机构 104）。 原子层生长装置还包括材料供给单元（105），其包括材料蒸发器（151），两个缓冲罐，即缓冲罐A（152a）和缓冲罐B（152b），填充阀A（153a） 缓冲罐B（152a）的缓冲罐A（152a）的供给阀A（154a），缓冲罐B（152b）的填充阀B（153b）和供给阀B（154b），喷射控制阀（155） 单元（156），其控制每个阀的打开/关闭。
-
公开(公告)号：US20110000554A1
公开(公告)日：2011-01-06
申请号：US12921771
申请日：2009-02-26
申请人： Nozomu Hattori
发明人： Nozomu Hattori
IPC分类号： F16K31/12
CPC分类号： C23C16/4482 , C23C16/45544 , C23C16/45593 , C30B25/14 , Y10T137/7761 , Y10T137/85978
摘要： A raw material supply device (105) includes an introduction pipe (152a) which introduces a carrier gas into a raw material vessel (151), a transport pipe (152b) which transports a source gas fed out from the raw material vessel, a supply pipe (155a) which is branched from the transport pipe and supplies the source gas to a film forming chamber (101), a circulation pipe (155b) which is branched from the transport pipe (152b) and returns the source gas to the introduction pipe (152a), an introduction valve (156a) which is attached to the introduction pipe, a supply valve (156b) which is attached to the supply pipe, a circulation valve (156c) which is attached to the circulation pipe, and a controller (157) which controls opening/closing of the valves. The controller controls the supply valve and the circulation valve to be in opposite open/closed states. The source gas can be supplied more stably while suppressing the waste of the raw material.
摘要翻译： 原料供给装置（105）具备将载气引入原料容器（151）的导入管（152a），输送从原料容器供给的原料气的输送管（152b） 管道（155a），其从输送管分支并将源气体供应到成膜室（101）;循环管（155b），其从输送管（152b）分支并将源气体返回到引入管 （152a），安装在导入管上的导入阀（156a），安装在供给管上的供给阀（156b），安装在循环管上的循环阀（156c）和控制器 157），其控制阀的打开/关闭。 控制器控制供应阀和循环阀处于相对的开/关状态。 可以更稳定地供给源气体，同时抑制原料的浪费。
-
公开(公告)号：US08440268B2
公开(公告)日：2013-05-14
申请号：US12294428
申请日：2007-03-28
IPC分类号： H05H1/24
CPC分类号： C23C16/402 , C23C16/45542 , C23C16/5096 , H01L21/02164 , H01L21/02222 , H01L21/02274 , H01L21/0228 , H01L21/3141 , H01L21/31612
摘要： Oxygen gas, for example, is introduced into a film forming chamber, and high-frequency power is supplied to a plurality of monopole antennas arranged above a silicon substrate (101) in the film forming chamber to generate a plasma of the introduced oxygen gas, thereby supplying atomic oxygen (123) onto the surface of an aminosilane molecular layer (102). This plasma generation is performed for about 1 sec. With this operation, the adsorption layer (102) adsorbed onto the surface of the silicon substrate (101) is oxidized, thereby forming a silicon oxide layer (112) corresponding to one atomic layer of silicon on the surface of the silicon substrate (101).
摘要翻译： 例如，将氧气引入成膜室，向成膜室内的硅基板（101）上方配置的多个单极天线供给高频电力，生成引入氧气的等离子体， 从而将原子氧（123）提供到氨基硅烷分子层（102）的表面上。 执行该等离子体生成约1秒。 通过该操作，吸附在硅衬底（101）的表面上的吸附层（102）被氧化，从而在硅衬底（101）的表面上形成对应于一个原子层硅的氧化硅层（112） 。
-
公开(公告)号：US08382071B2
公开(公告)日：2013-02-26
申请号：US12921771
申请日：2009-02-26
申请人： Nozomu Hattori
发明人： Nozomu Hattori
IPC分类号： B01F3/04
CPC分类号： C23C16/4482 , C23C16/45544 , C23C16/45593 , C30B25/14 , Y10T137/7761 , Y10T137/85978
摘要： A raw material supply device (105) includes an introduction pipe (152a) which introduces a carrier gas into a raw material vessel (151), a transport pipe (152b) which transports a source gas fed out from the raw material vessel, a supply pipe (155a) which is branched from the transport pipe and supplies the source gas to a film forming chamber (101), a circulation pipe (155b) which is branched from the transport pipe (152b) and returns the source gas to the introduction pipe (152a), an introduction valve (156a) which is attached to the introduction pipe, a supply valve (156b) which is attached to the supply pipe, a circulation valve (156c) which is attached to the circulation pipe, and a controller (157) which controls opening/closing of the valves. The controller controls the supply valve and the circulation valve to be in opposite open/closed states. The source gas can be supplied more stably while suppressing the waste of the raw material.
摘要翻译： 原料供给装置（105）具备将载气引入原料容器（151）的导入管（152a），输送从原料容器供给的原料气的输送管（152b） 管道（155a），其从输送管分支并将源气体供应到成膜室（101）;循环管（155b），其从输送管（152b）分支并将源气体返回到引入管 （152a），安装在导入管上的导入阀（156a），安装在供给管上的供给阀（156b），安装在循环管上的循环阀（156c）和控制器 157），其控制阀的打开/关闭。 控制器控制供应阀和循环阀处于相对的开/关状态。 可以更稳定地供给源气体，同时抑制原料的浪费。
-
公开(公告)号：US20130008382A1
公开(公告)日：2013-01-10
申请号：US13635725
申请日：2011-03-17
申请人： Nozomu Hattori , Yasunari Mori
发明人： Nozomu Hattori , Yasunari Mori
IPC分类号： C23C16/455
CPC分类号： C23C16/45544 , C23C16/45548 , C23C16/4557 , C23C16/45591
摘要： This thin-film forming device includes: a deposition vessel in which a reduced-pressure deposition space, to which a raw material gas and a reactant gas are alternately supplied on different timings, is formed in order to form a thin film on the substrate; and a gas supply unit configured to supply the raw material gas and the reactant gas to the deposition vessel. The gas supply unit is provided with at least one partition that bends a gas passage from an inlet port of each of the raw material gas and the reactant gas toward the deposition space.
摘要翻译： 该薄膜形成装置包括：沉积容器，其中在不同时刻交替地供给原料气体和反应气体的减压沉积空间，以在基板上形成薄膜; 以及气体供给单元，其构造成将原料气体和反应气体供给到所述沉积容器。 气体供给单元具有将来自原料气体和反应气体的入口的气体通路朝向沉积空间弯曲的至少一个分隔壁。
-
-
-
-
-
-
搜索结果
7 条记录 (耗时 0.012 秒)
