发明申请
- 专利标题： Semiconductor device and manufacturing method of the same
- 专利标题（中）： 半导体器件及其制造方法相同
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申请号： US12385594申请日： 2009-04-14
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公开(公告)号： US20090267082A1公开(公告)日： 2009-10-29
- 发明人: Takeo Yamamoto , Takeshi Endo , Eiichi Okuno , Masaki Konishi , Hirokazu Fujiwara
- 申请人： Takeo Yamamoto , Takeshi Endo , Eiichi Okuno , Masaki Konishi , Hirokazu Fujiwara
- 申请人地址： JP Kariya-city
- 专利权人： DENSO CORPORATION
- 当前专利权人： DENSO CORPORATION
- 当前专利权人地址： JP Kariya-city
- 优先权： JP2008-114020 20080424
- 主分类号： H01L29/872
- IPC分类号： H01L29/872 ; H01L29/24 ; H01L21/329
摘要：
A semiconductor device includes: a semiconductor element having a first surface and a second surface; a first electrode disposed on the first surface of the element; a second electrode disposed on the second surface of the element; and an insulation film covers a part of the first electrode, the first surface of the element and a part of a sidewall of the element. The above semiconductor device has small dimensions and a high breakdown voltage.
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