发明申请
- 专利标题: COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
- 专利标题(中): 化合物半导体发光器件及其制造方法
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申请号: US12095175申请日: 2007-12-06
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公开(公告)号: US20090267109A1公开(公告)日: 2009-10-29
- 发明人: Naoki Fukunaga , Hironao Shinohara
- 申请人: Naoki Fukunaga , Hironao Shinohara
- 申请人地址: JP Minato-ku, Tokyo
- 专利权人: SHOWA DENKO K.K.
- 当前专利权人: SHOWA DENKO K.K.
- 当前专利权人地址: JP Minato-ku, Tokyo
- 优先权: JP2006-333582 20061211
- 国际申请: PCT/JP2007/073989 WO 20071206
- 主分类号: H01L33/00
- IPC分类号: H01L33/00 ; H01L21/18
摘要:
A compound semiconductor light-emitting device which includes an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer, that are made of a compound semiconductor, formed on a substrate, the n-type semiconductor layer and the p-type semiconductor layer are stacked so as to interpose the light-emitting layer therebetween, a first conductive transparent electrode and a second conductive electrode. The first conductive transparent electrode is made of an IZO film containing an In2O3 crystal having a bixbyite structure. Also discussed is a method of manufacturing the device.
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