发明申请
US20090267109A1 COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
化合物半导体发光器件及其制造方法

  • 专利标题: COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
  • 专利标题(中): 化合物半导体发光器件及其制造方法
  • 申请号: US12095175
    申请日: 2007-12-06
  • 公开(公告)号: US20090267109A1
    公开(公告)日: 2009-10-29
  • 发明人: Naoki FukunagaHironao Shinohara
  • 申请人: Naoki FukunagaHironao Shinohara
  • 申请人地址: JP Minato-ku, Tokyo
  • 专利权人: SHOWA DENKO K.K.
  • 当前专利权人: SHOWA DENKO K.K.
  • 当前专利权人地址: JP Minato-ku, Tokyo
  • 优先权: JP2006-333582 20061211
  • 国际申请: PCT/JP2007/073989 WO 20071206
  • 主分类号: H01L33/00
  • IPC分类号: H01L33/00 H01L21/18
COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要:
A compound semiconductor light-emitting device which includes an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer, that are made of a compound semiconductor, formed on a substrate, the n-type semiconductor layer and the p-type semiconductor layer are stacked so as to interpose the light-emitting layer therebetween, a first conductive transparent electrode and a second conductive electrode. The first conductive transparent electrode is made of an IZO film containing an In2O3 crystal having a bixbyite structure. Also discussed is a method of manufacturing the device.
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