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45 条记录 (耗时 0.022 秒)

    Light-emitting device, manufacturing method thereof, and lamp
    2.
    发明授权
    Light-emitting device, manufacturing method thereof, and lamp 有权
    发光装置及其制造方法和灯

    公开(公告)号：US08124992B2

    公开(公告)日：2012-02-28

    申请号：US12199723

    申请日：2008-08-27

    申请人： Hiroshi Osawa ,  Naoki Fukunaga ,  Hironao Shinohara

    发明人： Hiroshi Osawa ,  Naoki Fukunaga ,  Hironao Shinohara

    IPC分类号： H01L33/00

    CPC分类号： H01L33/42 ,  H01L33/32 ,  H01L33/40 ,  H01L33/44 ,  H01L2933/0091

    摘要： The present invention provides a light-emitting device comprising an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer and a titanium oxide-based conductive film layer laminated in this order, wherein the titanium oxide-based conductive film layer comprises a first layer as a light extraction layer and a second layer as a current diffusion layer, the second layer being arranged on the p-type semiconductor layer side of the first layer, a method of manufacturing a light-emitting device, and a lamp.

    摘要翻译： 本发明提供一种发光器件，其包括依次层叠的n型半导体层，发光层，p型半导体层和氧化钛系导电膜层，其中，所述氧化钛系导电性 膜层包括作为光提取层的第一层和作为电流扩散层的第二层，第二层布置在第一层的p型半导体层侧，制造发光器件的方法和 一盏灯。

    SEMICONDUCTOR LIGHT EMITTING ELEMENT, METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENT, AND LAMP
    3.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING ELEMENT, METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENT, AND LAMP 有权
    半导体发光元件，制造半导体发光元件的方法及灯

    公开(公告)号：US20110068349A1

    公开(公告)日：2011-03-24

    申请号：US12993733

    申请日：2009-05-20

    申请人： Hironao Shinohara ,  Naoki Fukunaga

    发明人： Hironao Shinohara ,  Naoki Fukunaga

    IPC分类号： H01L33/42 ,  H01L33/30 ,  H01L21/28

    CPC分类号： H01L33/42 ,  H01L33/32 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

    摘要： A semiconductor light-emitting device (1) of the present invention includes a substrate (101); a laminate semiconductor layer (20) formed by sequentially laminating an n-type semiconductor layer (104), a light-emitting layer (105), and a p-type semiconductor layer (106) on the substrate (101); and a translucent electrode layer (109) formed on a top surface (106a) of the p-type semiconductor layer (106), wherein the translucent electrode layer (109) contains a dopant element, a content of the dopant element within the translucent electrode layer (109) decreases gradually toward the interface (109a) between the p-type semiconductor layer (106) and the translucent electrode layer (109), and in the translucent electrode layer (109) is formed a diffusion region in which an element constituting the p-type semiconductor layer (106) is diffused from the interface (109a) toward the inside of the translucent electrode layer (109).

    摘要翻译： 本发明的半导体发光装置（1）包括：基板（101）; 通过在基板（101）上依次层叠n型半导体层（104），发光层（105）和p型半导体层（106）而形成的层叠半导体层（20）。 以及形成在所述p型半导体层（106）的上表面（106a）上的透光性电极层（109），其中，所述透光性电极层（109）含有掺杂剂元素，所述透光性电极内的所述掺杂剂元素的含量 层（109）朝向p型半导体层（106）和透光性电极层（109）的界面（109a）逐渐减小，在透光性电极层（109）中形成有构成 p型半导体层（106）从界面（109a）朝向透光性电极层（109）的内部扩散。

    SOLAR CELL AND METHOD FOR PRODUCING THE SAME
    6.
    发明申请
    SOLAR CELL AND METHOD FOR PRODUCING THE SAME 审中-公开
    太阳能电池及其制造方法

    公开(公告)号：US20090205707A1

    公开(公告)日：2009-08-20

    申请号：US12388145

    申请日：2009-02-18

    申请人： Yoshiaki IKENOUE ,  Naoki Fukunaga ,  Hironao Shinohara ,  Hisayuki Miki ,  Kenzo Hanawa ,  Hiroaki Kaji ,  Hitoshi Yokouchi ,  Ryoko Konta

    发明人： Yoshiaki IKENOUE ,  Naoki Fukunaga ,  Hironao Shinohara ,  Hisayuki Miki ,  Kenzo Hanawa ,  Hiroaki Kaji ,  Hitoshi Yokouchi ,  Ryoko Konta

    IPC分类号： H01L31/00 ,  H01L21/306

    CPC分类号： H01L31/022466 ,  H01L31/0687 ,  H01L31/0693 ,  H01L31/1852 ,  H01L31/186 ,  H01L31/1884 ,  Y02E10/544 ,  Y02P70/521

    摘要： The object of the present invention is to provide a solar cell which is industrially beneficial and has high light conversion efficiency; and a method for producing a solar cell; and the present invention provides a solar cell comprising a substrate, a power generation layer for converting received light into electrical power, a translucent electrode, and another electrode, when light travels through each member from a first surface thereof, a surface opposite to the first surface is defined as a second surface, the power generation layer is formed at a second surface side of the substrate, the translucent electrode is formed on one surface of the power generation layer, and another electrode is formed on the other surface of the power generation layer, wherein the translucent electrode comprises hexagonal In2O3 crystal.

    摘要翻译： 本发明的目的是提供一种在工业上有益且具有高的光转换效率的太阳能电池; 以及太阳能电池的制造方法。 并且本发明提供了一种太阳能电池，其包括基板，用于将接收的光转换为电力的发电层，透光性电极和另一电极，当光从其第一表面穿过各构件时，与第一 表面被定义为第二表面，发电层形成在基板的第二表面侧，透光性电极形成在发电层的一个表面上，另一个电极形成在发电的另一个表面上 层，其中所述透光性电极包含六方晶In2O3晶体。

    Trimmer impedance component, semiconductor device and trimming method
    8.
    发明申请
    Trimmer impedance component, semiconductor device and trimming method 失效
    微调阻抗分量，半导体器件和微调方法

    公开(公告)号：US20050110608A1

    公开(公告)日：2005-05-26

    申请号：US10994601

    申请日：2004-11-23

    申请人： Naoki Fukunaga

    发明人： Naoki Fukunaga

    IPC分类号： H01L23/52 ,  H01L21/3205 ,  H01L21/822 ,  H01L27/04 ,  H01L27/08 ,  H01C10/00

    CPC分类号： H01L27/0802

    摘要： A trimmer resistance component of the present invention has a trimmer resistor constructed of a p-type diffusion layer formed on the surface of an n-type epitaxial layer. A first electrode is connected to a portion located on one end side of this trimmer resistor, while a first connection portion, a second connection portion and a third connection portion of the second electrode are connected to portions located on the other end side. By cutting a portion of the first connection portion and a portion of the second connection portion by laser trimming, a resistance value between the first electrode and the second electrode can be trimmed without changing a parasitic capacitance between the trimmer resistor and the n-type epitaxial layer.

    摘要翻译： 本发明的微调电阻分量具有由形成在n型外延层的表面上的p型扩散层构成的微调电阻。 第一电极连接到位于该微调电阻器的一端侧的部分，而第二电极的第一连接部分，第二连接部分和第三连接部分连接到位于另一端侧的部分。 通过激光修整来切割第一连接部分和第二连接部分的一部分，可以在不改变微调电阻器和n型外延层之间的寄生电容的情况下修整第一电极和第二电极之间的电阻值 层。

    Photodiode device including window defined in passivation layer for removing electrostatic charge
    9.
    发明授权
    Photodiode device including window defined in passivation layer for removing electrostatic charge 失效
    光电二极管器件包括在钝化层中定义的窗口，用于去除静电电荷

    公开(公告)号：US06873025B2

    公开(公告)日：2005-03-29

    申请号：US09984657

    申请日：2001-10-30

    申请人： Hideo Wada ,  Isamu Ohkubo ,  Kazuhiro Natsuaki ,  Naoki Fukunaga ,  Shigeki Hayashida

    发明人： Hideo Wada ,  Isamu Ohkubo ,  Kazuhiro Natsuaki ,  Naoki Fukunaga ,  Shigeki Hayashida

    IPC分类号： H01L27/14 ,  H01L29/40 ,  H01L29/88 ,  H01L31/0216 ,  H01L31/06 ,  H01L31/10

    CPC分类号： H01L31/02161

    摘要： A photodiode includes a first conductivity type semiconductor substrate or a first conductivity type semiconductor layer; a second conductivity type semiconductor layer provided on the first conductivity type semiconductor substrate or the first conductivity type semiconductor layer; an anti-reflection film provided on a surface of a portion of the second conductivity type semiconductor layer which is in a light receiving area; a first conductive layer provided in an area in the vicinity of the light receiving area; and a passivation layer provided on the first conductive layer. Light incident on the photodiode is detected by a junction of the one of the first conductivity type semiconductor substrate and the first conductivity type semiconductor layer, and the second conductivity type semiconductor layer. The area in the vicinity of the light receiving area includes a window area having an opening in the passivation layer for partially exposing the first conductive layer.

    摘要翻译： 光电二极管包括第一导电类型半导体衬底或第一导电类型半导体层; 设置在所述第一导电型半导体基板或所述第一导电型半导体层上的第二导电型半导体层; 设置在所述第二导电型半导体层的位于光接收区域的部分的表面上的防反射膜; 设置在所述光接收区域附近的区域中的第一导电层; 以及设置在第一导电层上的钝化层。 通过第一导电类型半导体衬底和第一导电类型半导体层之一以及第二导电类型半导体层的接合来检测入射在光电二极管上的光。 光接收区域附近的区域包括在钝化层中具有用于部分地暴露第一导电层的开口的窗口区域。