发明申请
US20090267118A1 METHOD FOR FORMING CARBON SILICON ALLOY (CSA) AND STRUCTURES THEREOF
审中-公开
形成碳硅合金(CSA)的方法及其结构
- 专利标题: METHOD FOR FORMING CARBON SILICON ALLOY (CSA) AND STRUCTURES THEREOF
- 专利标题(中): 形成碳硅合金(CSA)的方法及其结构
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申请号: US12111377申请日: 2008-04-29
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公开(公告)号: US20090267118A1公开(公告)日: 2009-10-29
- 发明人: Ashima B. Chakravarti , Abhishek Dube , Rainer Loesing , Dominic J. Schepis
- 申请人: Ashima B. Chakravarti , Abhishek Dube , Rainer Loesing , Dominic J. Schepis
- 申请人地址: US NY Armonk
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L49/00
- IPC分类号: H01L49/00 ; H01L21/20
摘要:
Methods for forming carbon silicon alloy (CSA) and structures thereof are disclosed. The method provides improvement in substitutionality and deposition rate of carbon in epitaxially grown carbon silicon alloy layers (i.e., substituted carbon in Si lattice). In one embodiment of the disclosed method, a carbon silicon alloy layer is epitaxially grown on a substrate at an intermediate temperature with a silicon precursor, a carbon (C) precursor in the presence of an etchant and a trace amount of germanium material (e.g., germane (GeH4)). The intermediate temperature increases the percentage of substitutional carbon in epitaxially grown CSA layer and avoids any tendency for silicon carbide to form. The presence of the trace amount of germanium material, of approximately less than 1% to approximately 5%, in the resulting epitaxial layer, has an effect of stabilizing and enhancing deposition/growth rate without compromising the tensile stress of CSA layer formed thereby.