发明申请
- 专利标题: Reduced Inductance Interconnect for Enhanced Microwave and Millimeter-Wave Systems
- 专利标题(中): 增强型微波和毫米波系统的降低电感互连
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申请号: US12368492申请日: 2009-02-10
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公开(公告)号: US20090267235A1公开(公告)日: 2009-10-29
- 发明人: James S. Mason , John Michael Bedinger , Raj Rajendran
- 申请人: James S. Mason , John Michael Bedinger , Raj Rajendran
- 申请人地址: US MA Waltham
- 专利权人: Raytheon Company
- 当前专利权人: Raytheon Company
- 当前专利权人地址: US MA Waltham
- 主分类号: H01L23/535
- IPC分类号: H01L23/535
摘要:
According to one embodiment of the present invention, a microwave or millimeter wave module includes a dielectric layer having a pocket formed substantially through the dielectric layer. The dielectric is attached to a metal substrate. The pocket has substantially vertical sidewalls. An integrated circuit is disposed in the pocket. Opposing sides of the integrated circuit are substantially parallel to the sidewalls of the pocket. An interconnect electrically couples the integrated circuit to a bond pad disposed on the outer surface of the dielectric layer. The interconnect has a length that is minimized to result in reduced inductance of the semiconductor device.
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