发明申请
US20090267235A1 Reduced Inductance Interconnect for Enhanced Microwave and Millimeter-Wave Systems 有权
增强型微波和毫米波系统的降低电感互连

Reduced Inductance Interconnect for Enhanced Microwave and Millimeter-Wave Systems
摘要:
According to one embodiment of the present invention, a microwave or millimeter wave module includes a dielectric layer having a pocket formed substantially through the dielectric layer. The dielectric is attached to a metal substrate. The pocket has substantially vertical sidewalls. An integrated circuit is disposed in the pocket. Opposing sides of the integrated circuit are substantially parallel to the sidewalls of the pocket. An interconnect electrically couples the integrated circuit to a bond pad disposed on the outer surface of the dielectric layer. The interconnect has a length that is minimized to result in reduced inductance of the semiconductor device.
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