发明申请
US20090268533A1 Sensing delay circuit and semiconductor memrory device using the same 有权
感应延迟电路和使用其的半导体存储器件

  • 专利标题: Sensing delay circuit and semiconductor memrory device using the same
  • 专利标题(中): 感应延迟电路和使用其的半导体存储器件
  • 申请号: US12228971
    申请日: 2008-08-19
  • 公开(公告)号: US20090268533A1
    公开(公告)日: 2009-10-29
  • 发明人: Sang Il Park
  • 申请人: Sang Il Park
  • 专利权人: Hynix Semiconductor Inc.
  • 当前专利权人: Hynix Semiconductor Inc.
  • 优先权: KR10-2008-0039589 20080428
  • 主分类号: G11C7/00
  • IPC分类号: G11C7/00 H03H11/26
Sensing delay circuit and semiconductor memrory device using the same
摘要:
A sensing delay circuit includes a logic element which responds to a test mode signal to transfer a start signal, a delay unit which is configured of a plurality of inverters having MOS transistors with controlled threshold voltage, and receives external voltage as bulk voltage and delays an output signal from the logic element by a predetermined period, and a buffer which responds to an output signal from the delay unit to buffer the output signal from the logic element and output it.
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