发明申请
US20090272991A1 LIGHT EMITTING DIODE HAVING AlInGaP ACTIVE LAYER AND METHOD OF FABRICATING THE SAME
有权
具有AlInGaP活性层的发光二极管及其制造方法
- 专利标题: LIGHT EMITTING DIODE HAVING AlInGaP ACTIVE LAYER AND METHOD OF FABRICATING THE SAME
- 专利标题(中): 具有AlInGaP活性层的发光二极管及其制造方法
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申请号: US12442511申请日: 2007-09-04
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公开(公告)号: US20090272991A1公开(公告)日: 2009-11-05
- 发明人: Chung Hoon Lee , Joe Ho Lee , Mi Hae Kim
- 申请人: Chung Hoon Lee , Joe Ho Lee , Mi Hae Kim
- 申请人地址: KR Ansn-si
- 专利权人: Seoul Opto Device Co., Ltd
- 当前专利权人: Seoul Opto Device Co., Ltd
- 当前专利权人地址: KR Ansn-si
- 优先权: KR10-2006-0092828 20060925; KR10-2006-0094243 20060927
- 国际申请: PCT/KR2007/004241 WO 20070904
- 主分类号: H01L33/00
- IPC分类号: H01L33/00
摘要:
A light emitting diode having an AlInGaP active layer and a method of fabricating the same are disclosed. The light emitting diode includes a substrate. A plurality of light emitting cells are positioned to be spaced apart from one another, wherein each of the light emitting cells has a first conductive-type lower semiconductor layer, an AlInGaP active layer and a second conductive-type upper semiconductor layer. Meanwhile, a semi-insulating layer is interposed between the substrate and the light emitting cells. Further, wires connect the plurality of light emitting cells in series. Accordingly, it is possible to provide a light emitting diode, in which a plurality of light emitting cells are connected in series to one another through wires to be driven by an AC power source.
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