公开(公告)号：US20090272991A1

公开(公告)日：2009-11-05

申请号：US12442511

申请日：2007-09-04

申请人： Chung Hoon Lee ,  Joe Ho Lee ,  Mi Hae Kim

发明人： Chung Hoon Lee ,  Joe Ho Lee ,  Mi Hae Kim

IPC分类号： H01L33/00

CPC分类号： H01L27/153 ,  H01L25/0753 ,  H01L33/62 ,  H01L2224/48137 ,  H01L2224/49107

摘要： A light emitting diode having an AlInGaP active layer and a method of fabricating the same are disclosed. The light emitting diode includes a substrate. A plurality of light emitting cells are positioned to be spaced apart from one another, wherein each of the light emitting cells has a first conductive-type lower semiconductor layer, an AlInGaP active layer and a second conductive-type upper semiconductor layer. Meanwhile, a semi-insulating layer is interposed between the substrate and the light emitting cells. Further, wires connect the plurality of light emitting cells in series. Accordingly, it is possible to provide a light emitting diode, in which a plurality of light emitting cells are connected in series to one another through wires to be driven by an AC power source.

摘要翻译： 公开了具有AlInGaP有源层的发光二极管及其制造方法。 发光二极管包括基板。 多个发光单元被定位成彼此间隔开，其中每个发光单元具有第一导电型下半导体层，AlInGaP有源层和第二导电型上半导体层。 同时，在衬底和发光单元之间插入半绝缘层。 此外，电线串联连接多个发光单元。 因此，可以提供一种发光二极管，其中多个发光单元通过由AC电源驱动的导线彼此串联连接。