发明申请
- 专利标题: METHOD FOR FORMING BUFFER LAYER FOR GaN SINGLE CRYSTAL
- 专利标题(中): 用于形成GaN单晶的缓冲层的方法
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申请号: US12433949申请日: 2009-05-01
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公开(公告)号: US20090275190A1公开(公告)日: 2009-11-05
- 发明人: Kyung Seob HAN , Jeong HEO , Hyeong Jun KIM , Seung Kil LEE
- 申请人: Kyung Seob HAN , Jeong HEO , Hyeong Jun KIM , Seung Kil LEE
- 申请人地址: KR Siheung-si
- 专利权人: GRAND TECH CO., LTD
- 当前专利权人: GRAND TECH CO., LTD
- 当前专利权人地址: KR Siheung-si
- 优先权: KR10-2008-0041345 20080502
- 主分类号: H01L21/20
- IPC分类号: H01L21/20
摘要:
Disclosed is a method for forming a buffer layer for growing gallium nitride single crystals on a sapphire substrate using hydride vapor phase epitaxy (HVPE), wherein the buffer layer is formed in the form of a doped vertical gallium nitride (GaN) single crystal film with a nanoporosity of 0.10 to 0.15 μm on the sapphire substrate by reacting HCl and NH3 as a Group III/V mix gas.The nanoporous buffer layer interposed on the interface between the sapphire substrate and galluim nitride reduces tensile stress generated by the difference in thermal expansion coefficient between gallium nitride and the sapphire substrate, enables growth of the gallium nitride layer to a thickness of 1 micrometer (m) to several millimeters (nm) without causing cracks, and reduces the lattice constant difference to improve crystallinity.
公开/授权文献
- US08383494B2 Method for forming buffer layer for GaN single crystal 公开/授权日:2013-02-26