发明申请
- 专利标题： GALLIUM NITRIDE BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
- 专利标题（中）： 基于氮化镓的化合物半导体发光器件及其制造方法
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申请号： US12097054申请日： 2006-12-13
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公开(公告)号： US20090278158A1公开(公告)日： 2009-11-12
- 发明人: Naoki Fukunaga , Hironao Shinohara , Hiroshi Osawa
- 申请人： Naoki Fukunaga , Hironao Shinohara , Hiroshi Osawa
- 优先权： JP2005-360288 20051214; JP2005-360289 20051214
- 国际申请： PCT/JP2006/324856 WO 20061213
- 主分类号： H01L33/00
- IPC分类号： H01L33/00
摘要：
The present invention provides a gallium nitride based compound semiconductor light-emitting device having high light emission efficiency and a low driving voltage Vf. The gallium nitride based compound semiconductor light-emitting device includes a p-type semiconductor layer, and a transparent conductive oxide film that includes dopants and is formed on the p-type semiconductor layer. A dopant concentration at an interface between the p-type semiconductor layer and the transparent conductive oxide film is higher than the bulk dopant concentration of the transparent conductive oxide film. Therefore, the contact resistance between the p-type semiconductor layer and the transparent conductive oxide film is reduced.