发明申请
- 专利标题： ENHANCED STRESS-RETENTION SILICON-ON-INSULATOR DEVICES AND METHODS OF FABRICATING ENHANCED STRESS RETENTION SILICON-ON-INSULATOR DEVICES
- 专利标题（中）： 增强型应力保护绝缘子硅器件及其制造方法增强型应力保持型绝缘子硅器件
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申请号： US12116237申请日： 2008-05-07
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公开(公告)号： US20090278201A1公开(公告)日： 2009-11-12
- 发明人: Kiran V. Chatty , Robert J. Gauthier, JR. , Jed Hickory Rankin , Robert R. Robison , William Robert Tonti
- 申请人： Kiran V. Chatty , Robert J. Gauthier, JR. , Jed Hickory Rankin , Robert R. Robison , William Robert Tonti
- 主分类号： H01L29/772
- IPC分类号： H01L29/772 ; H01L21/336
摘要：
Field effect transistor and methods of fabricating field effect transistors. The field effect transistors includes: a semiconductor substrate; a silicon oxide layer on the substrate; a stiffening layer on the silicon oxide layer; a single crystal silicon layer on the stiffening layer; a source and a drain on opposite sides of a channel region of the silicon layer; a gate electrode over the channel region and a gate dielectric between the gate electrode and the channel region.
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