利索-全球专利检索

  1. 登录
  2. 注册
发明申请
US20090282186A1 DYNAMIC AND ADAPTIVE OPTIMIZATION OF READ COMPARE LEVELS BASED ON MEMORY CELL THRESHOLD VOLTAGE DISTRIBUTION 有权
基于存储单元阈值电压分配的读取比较电平的动态和自适应优化

  • 专利标题： DYNAMIC AND ADAPTIVE OPTIMIZATION OF READ COMPARE LEVELS BASED ON MEMORY CELL THRESHOLD VOLTAGE DISTRIBUTION
  • 专利标题（中）： 基于存储单元阈值电压分配的读取比较电平的动态和自适应优化
  • 申请号： US12338850
    申请日： 2008-12-18
  • 公开(公告)号： US20090282186A1
    公开(公告)日： 2009-11-12
  • 发明人: Nima Mokhlesi , Henry Chin
  • 申请人： Nima Mokhlesi , Henry Chin
  • 主分类号： G06F12/00
  • IPC分类号： G06F12/00
DYNAMIC AND ADAPTIVE OPTIMIZATION OF READ COMPARE LEVELS BASED ON MEMORY CELL THRESHOLD VOLTAGE DISTRIBUTION
摘要：
A process is performed periodically or in response to an error in order to dynamically and adaptively optimize read compare levels based on memory cell threshold voltage distribution. One embodiment of the process includes determining threshold voltage distribution data for a population of non-volatile storage elements, smoothing the threshold voltage distribution data using a weighting function to create an interim set of data, determining a derivative of the interim set of data, and identifying and storing negative to positive zero crossings of the derivative as read compare points.
摘要（中）：

周期性地或响应于错误执行过程，以便基于存储器单元阈值电压分布来动态地和自适应地优化读取比较电平。 该过程的一个实施例包括确定一组非易失性存储元件的阈值电压分布数据，使用加权函数平滑阈值电压分布数据，以创建临时数据集，确定中间数据集的导数，以及 识别和存储导数的正零交叉的负值作为读取的比较点。

公开/授权文献
信息查询
Global Dossier Espacenet
0/0