发明申请
- 专利标题: Patterning process
- 专利标题(中): 图案化过程
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申请号: US12453241申请日: 2009-05-04
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公开(公告)号: US20090286188A1公开(公告)日: 2009-11-19
- 发明人: Jun Hatakeyama , Tsutomu Ogihara , Mutsuo Nakashima , Kazuhiro Katayama
- 申请人: Jun Hatakeyama , Tsutomu Ogihara , Mutsuo Nakashima , Kazuhiro Katayama
- 申请人地址: JP TOKYO
- 专利权人: SHIN-ETSU CHEMICAL CO., LTD.
- 当前专利权人: SHIN-ETSU CHEMICAL CO., LTD.
- 当前专利权人地址: JP TOKYO
- 优先权: JP2008-128242 20080515; JP2009-022685 20090203
- 主分类号: G03F7/20
- IPC分类号: G03F7/20
摘要:
The present invention provides a patterning process, in which a resistance with regard to an organic solvent used for a composition for formation of a reverse film is rendered to a positive pattern to the degree of necessity and yet solubility into an alkaline etching liquid is secured, thereby enabling to finally obtain a negative image by a positive-negative reversal by performing a wet etching using an alkaline etching liquid.A resist patterning process of the present invention using a positive-negative reversal comprises at least a step of forming a resist film by applying a positive resist composition; a step of obtaining a positive pattern by exposing and developing the resist film; a step of crosslinking the positive resist pattern thus obtained; a step of forming a reverse film; and a step of reversing the positive pattern to a negative pattern by dissolving into an alkaline wet-etching liquid for removal.
公开/授权文献
- US08198016B2 Patterning process 公开/授权日:2012-06-12
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