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公开(公告)号：US08426105B2
公开(公告)日：2013-04-23
申请号：US12786759
申请日：2010-05-25
申请人： Takeru Watanabe , Masashi Iio , Kazuhiro Katayama , Jun Hatakeyama , Tsunehiro Nishi , Takeshi Kinsho
发明人： Takeru Watanabe , Masashi Iio , Kazuhiro Katayama , Jun Hatakeyama , Tsunehiro Nishi , Takeshi Kinsho
IPC分类号： G03F7/004
CPC分类号： G03F7/0397 , G03F7/0035 , G03F7/0046 , G03F7/2041 , G03F7/40
摘要： A patterning process includes (1) coating a first positive resist composition onto a substrate, baking, exposing, post-exposure baking, and alkali developing to form a first resist pattern, (2) coating a resist-modifying composition onto the first resist pattern and heating to effect modifying treatment, and (3) coating a second positive resist composition, baking, exposing, post-exposure baking, and alkali developing to form a second resist pattern. The resist-modifying composition comprises a carbamate compound and a solvent.
摘要翻译： 图案化工艺包括（1）将第一正性抗蚀剂组合物涂覆在基材上，烘烤，曝光，曝光后烘烤和碱显影以形成第一抗蚀剂图案，（2）将抗蚀剂改性组合物涂覆到第一抗蚀剂图案上 加热进行改性处理，（3）涂布第二正性抗蚀剂组合物，烘烤，曝光，曝光后烘烤和碱显影以形成第二抗蚀剂图案。 抗蚀剂改性组合物包含氨基甲酸酯化合物和溶剂。
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公开(公告)号：US20130071788A1
公开(公告)日：2013-03-21
申请号：US13614494
申请日：2012-09-13
申请人： Jun Hatakeyama , Kazuhiro Katayama , Koji Hasegawa
发明人： Jun Hatakeyama , Kazuhiro Katayama , Koji Hasegawa
CPC分类号： G03F7/325 , G03F1/00 , G03F7/0045 , G03F7/0046 , G03F7/0395 , G03F7/0397 , G03F7/11 , G03F7/203 , G03F7/2041 , G03F7/70466
摘要： A negative pattern is formed by coating a resist composition comprising a polymer comprising recurring units of acid labile group-substituted vinyl alcohol and maleic anhydride and/or maleimide, an acid generator, and an organic solvent onto a substrate, prebaking, exposing to high-energy radiation, and developing in an organic solvent developer such that the unexposed region of resist film is dissolved away and the exposed region of resist film is not dissolved. In image formation via positive/negative reversal by organic solvent development, the resist film is characterized by a high dissolution contrast between the unexposed and exposed regions.
摘要翻译： 通过将包含酸不稳定基取代的乙烯醇和马来酸酐和/或马来酰亚胺的重复单元和/或马来酰亚胺，酸产生剂和有机溶剂的聚合物的抗蚀剂组合物涂布在基材上，预烘烤， 能量辐射，并在有机溶剂显影剂中显影，使得抗蚀剂膜的未曝光区域被溶解并且抗蚀剂膜的曝光区域不溶解。 在通过有机溶剂显影的正/负反转的图像形成中，抗蚀剂膜的特征在于未曝光和曝光区域之间的高溶解度对比度。
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公开(公告)号：US20120183903A1
公开(公告)日：2012-07-19
申请号：US13350153
申请日：2012-01-13
CPC分类号： G03F7/004 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/094 , G03F7/11 , G03F7/20 , G03F7/2037 , G03F7/2041 , G03F7/325
摘要： A pattern is formed by applying a resist composition comprising a polymer comprising recurring units having a nitrogen atom bonded to an acid labile group, an acid generator, and an organic solvent onto a substrate, prebaking to form a resist film, exposing the resist film to high-energy radiation, baking, and developing the exposed film with an organic solvent developer to form a negative pattern wherein the unexposed region of film is dissolved and the exposed region of film is not dissolved.
摘要翻译： 通过将包含含有具有与酸不稳定基团键合的氮原子的重复单元，酸发生剂和有机溶剂的聚合物的抗蚀剂组合物涂布在基材上，预烘烤以形成抗蚀剂膜，将抗蚀剂膜暴露于 高能辐射，烘烤，并用有机溶剂显影剂显影曝光的薄膜以形成其中未暴露的薄膜区域溶解并且曝光区域不溶解的负图案。
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公开(公告)号：US08198016B2
公开(公告)日：2012-06-12
申请号：US12453241
申请日：2009-05-04
CPC分类号： G03F7/0035 , G03F7/0042 , G03F7/0043 , G03F7/0397 , G03F7/0757 , G03F7/0758 , G03F7/2024 , G03F7/40 , Y10S430/106 , Y10S430/114 , Y10S430/115
摘要： The present invention provides a patterning process, in which a resistance with regard to an organic solvent used for a composition for formation of a reverse film is rendered to a positive pattern to the degree of necessity and yet solubility into an alkaline etching liquid is secured, thereby enabling to finally obtain a negative image by a positive-negative reversal by performing a wet etching using an alkaline etching liquid.A resist patterning process of the present invention using a positive-negative reversal comprises at least a step of forming a resist film by applying a positive resist composition; a step of obtaining a positive pattern by exposing and developing the resist film; a step of crosslinking the positive resist pattern thus obtained; a step of forming a reverse film; and a step of reversing the positive pattern to a negative pattern by dissolving into an alkaline wet-etching liquid for removal.
摘要翻译： 本发明提供了一种图案化工艺，其中针对用于形成反转膜的组合物的有机溶剂的电阻呈现为正向图案，并且确保了对碱性蚀刻液的溶解性， 从而通过使用碱性蚀刻液进行湿式蚀刻，能够最终通过正负反转获得负像。 使用正负反转的本发明的抗蚀剂图案化工艺至少包括通过施加正型抗蚀剂组合物形成抗蚀剂膜的步骤; 通过曝光和显影抗蚀剂膜获得正图案的步骤; 将由此获得的正性抗蚀剂图案交联的步骤; 形成逆膜的步骤; 以及通过将碱性湿蚀刻液除去而将正极图案反转为负图案的步骤。
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公开(公告)号：US08057982B2
公开(公告)日：2011-11-15
申请号：US12398483
申请日：2009-03-05
CPC分类号： G03F7/40 , G03F7/0046 , G03F7/0397
摘要： A pattern is formed by applying a positive resist composition comprising a polymer comprising hydroxyalkylnaphthalene-bearing recurring units and acid labile group-bearing recurring units onto a substrate to form a resist film, heat treating and exposing the resist film to radiation, heat treating and developing the resist film with a developer to form a first pattern, and causing the resist film to crosslink and cure with the aid of heat or of acid and heat. A second pattern is then formed in the space area of the first pattern. The double patterning process reduces the pitch between patterns to one half.
摘要翻译： 通过将包含含有羟烷基萘的重复单元和含酸不稳定基团的重复单元的聚合物的正性抗蚀剂组合物应用到基材上以形成抗蚀剂膜，将抗蚀剂膜热处理和曝光以进行辐射，热处理和显影而形成图案 所述抗蚀剂膜具有显影剂以形成第一图案，并且使得所述抗蚀剂膜在热或酸和热的帮助下交联和固化。 然后在第一图案的空间区域中形成第二图案。 双重图案化工艺将图案之间的间距缩小到一半。
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公开(公告)号：US20090239936A1
公开(公告)日：2009-09-24
申请号：US12227358
申请日：2007-05-09
IPC分类号： A61K31/7105 , C07H21/02 , G01N33/68
CPC分类号： A61K45/06 , A61K31/704 , A61K48/00
摘要： A Ras, Raf, MEK, ERK or RSK inhibitor, namely a P-glycoprotein expression inhibitor or a BCRP expression inhibitor, can be screened by utilizing the MAPK signaling activity as an indicator. It becomes possible to provide an anticancer agent which is reduced in resistance acquisition, and also provide an agent for preventing the resistance against an anticancer agent, which can enhance the therapeutic effect of the anticancer agent against cancer.
摘要翻译： 可以通过利用MAPK信号传导活性作为指标筛选Ras，Raf，MEK，ERK或RSK抑制剂，即P-糖蛋白表达抑制剂或BCRP表达抑制剂。 可以提供降低抗性获得的抗癌剂，并且还可以提供用于防止抗癌剂的抗药性的药剂，其可以增强抗癌剂对癌症的治疗效果。
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公开(公告)号：US08741554B2
公开(公告)日：2014-06-03
申请号：US12787823
申请日：2010-05-26
CPC分类号： G03F7/70466 , G03F7/0035 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/2041 , G03F7/38 , G03F7/40 , Y10S430/108 , Y10S430/111
摘要： A pattern is formed by coating a first positive resist composition comprising a base resin, a photoacid generator, and a base generator onto a substrate to form a first resist film, patternwise exposure, PEB, and development to form a first resist pattern, heating the first resist pattern for causing the base generator to generate a base for inactivating the pattern to acid, coating a second positive resist composition comprising a C3-C8 alcohol and an optional C6-C12 ether onto the first resist pattern-bearing substrate to form a second resist film, patternwise exposure, PEB, and development to form a second resist pattern.
摘要翻译： 通过将包含基础树脂，光致酸发生剂和基底发生器的第一正型抗蚀剂组合物涂覆在基材上以形成第一抗蚀剂膜，图案曝光，PEB和显影以形成第一抗蚀剂图案，形成图案，加热 第一抗蚀剂图案，用于使基底发生器产生用于使图案失去酸的碱，将包含C 3 -C 8醇和任选的C 6 -C 12醚的第二正性抗蚀剂组合物涂覆到第一抗蚀剂图案衬底上以形成第二抗蚀剂图案 抗蚀剂膜，图案曝光，PEB和显影以形成第二抗蚀剂图案。
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公开(公告)号：US08703408B2
公开(公告)日：2014-04-22
申请号：US13177297
申请日：2011-07-06
申请人： Jun Hatakeyama , Kazuhiro Katayama , Koji Hasegawa
发明人： Jun Hatakeyama , Kazuhiro Katayama , Koji Hasegawa
IPC分类号： G03F7/26
CPC分类号： G03F7/0397 , G03F7/2041
摘要： A pattern is formed by coating a resist composition comprising a polymer comprising recurring units having an acid labile group-substituted hydroxyl group and recurring units having an acid labile group-substituted carboxyl group, an acid generator, and an organic solvent onto a substrate, prebaking to form a resist film, exposing the resist film to high-energy radiation, PEB, and developing the exposed film two times with an organic solvent and an alkaline aqueous solution. Due to the two developments, one line is divided into two lines, achieving a resolution doubling the mask pattern.
摘要翻译： 通过将包含含有酸不稳定基取代的羟基的重复单元的聚合物和具有酸不稳定基取代的羧基的重复单元，酸产生剂和有机溶剂的抗蚀剂组合物涂布在基材上，预烘烤 形成抗蚀剂膜，将抗蚀剂膜暴露于高能量辐射，PEB，并用有机溶剂和碱性水溶液将曝光的膜显影两次。 由于两个发展，一条线分为两条线，实现了掩模图案加倍的分辨率。
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公开(公告)号：US08617800B2
公开(公告)日：2013-12-31
申请号：US12458884
申请日：2009-07-27
申请人： Jun Hatakeyama , Kazuhiro Katayama , Yoshio Kawai
发明人： Jun Hatakeyama , Kazuhiro Katayama , Yoshio Kawai
IPC分类号： G03F7/26
CPC分类号： H01L21/0332 , H01L21/0275 , H01L21/0337
摘要： There is disclosed a patterning process including steps of at least: forming a photoresist film on a substrate; exposing the photoresist film to a high energy beam; developing by using a developer; forming a photoresist pattern; and then forming a spacer on the photoresist pattern sidewall, thereby forming a pattern on the substrate, a patterning process, wherein at least the photoresist pattern having the hardness of 0.4 GPa or more or the Young's modulus of 9.2 GPa or more as a film strength is formed, and a pattern is formed on the substrate by forming a silicon oxide film as the spacer on the photoresist pattern sidewall. There can be provided a patterning process without causing a deformation of a resist pattern and an increase in LWR at the time of forming a silicon oxide film on a photoresist pattern.
摘要翻译： 公开了一种图案化工艺，其包括至少在衬底上形成光致抗蚀剂膜的步骤; 将光致抗蚀剂膜暴露于高能量束; 使用开发商开发; 形成光致抗蚀剂图案; 然后在光致抗蚀剂图案侧壁上形成间隔物，从而在基板上形成图案，图案化工艺，其中至少具有0.4GPa或更高的硬度的光刻胶图案或9.2GPa或更大的杨氏模量作为膜强度 并且通过在光致抗蚀剂图案侧壁上形成作为间隔物的氧化硅膜在衬底上形成图案。 可以提供图案化工艺，而不会在抗蚀剂图案上形成氧化硅膜时引起抗蚀剂图案的变形和增加的LWR。
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公开(公告)号：US08507173B2
公开(公告)日：2013-08-13
申请号：US12633423
申请日：2009-12-08
申请人： Jun Hatakeyama , Kazuhiro Katayama
发明人： Jun Hatakeyama , Kazuhiro Katayama
CPC分类号： G03F7/2041 , G03F7/0035 , G03F7/0046 , G03F7/0397 , G03F7/40
摘要： A pattern is formed by applying a first positive resist composition onto a substrate, heat treatment, exposure, heat treatment and development to form a first resist pattern; causing the first resist pattern to crosslink and cure by irradiation of high-energy radiation of 200-320 nm wavelength; further applying a second positive resist composition onto the substrate, heat treatment, exposure, heat treatment and development to form a second resist pattern. The double patterning process reduces the pitch between patterns to one half.
摘要翻译： 通过将第一正性抗蚀剂组合物施加到基材上，热处理，曝光，热处理和显影以形成第一抗蚀剂图案而形成图案; 使得第一抗蚀剂图案通过200-320nm波长的高能辐射的照射而交联和固化; 进一步将第二正性抗蚀剂组合物施加到基材上，进行热处理，曝光，热处理和显影以形成第二抗蚀剂图案。 双重图案化工艺将图案之间的间距缩小到一半。
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