发明申请
- 专利标题： Semiconductor Device and Fabrication Method Thereof
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US12512173申请日： 2009-07-30
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公开(公告)号： US20090290082A1公开(公告)日： 2009-11-26
- 发明人: Shunpei Yamazaki , Yasuyuki Arai , Jun Koyama
- 申请人： Shunpei Yamazaki , Yasuyuki Arai , Jun Koyama
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 优先权： JP11-191093 19990706
- 主分类号： G02F1/136
- IPC分类号： G02F1/136 ; H01L33/00 ; H01L21/8234 ; H01L21/336 ; H01L29/786
摘要：
A p channel TFT of a driving circuit has a single drain structure and its n channel TFT, an LDD structure. A pixel TFT has the LDD structure. A pixel electrode disposed in a pixel unit is connected to the pixel TFT through a hole bored in at least a protective insulation film formed of an inorganic insulating material and formed above a gate electrode of the pixel TFT, and in an inter-layer insulation film disposed on the insulation film in close contact therewith. These process steps use 6 to 8 photo-masks.
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