发明申请
- 专利标题: NONVOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
- 专利标题(中): 非易失性存储器件及其制造方法
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申请号: US12348185申请日: 2009-01-02
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公开(公告)号: US20090290417A1公开(公告)日: 2009-11-26
- 发明人: Myoung-Kyu PARK , Byung-Sun KIM , Tae-Jung LEE , Dong-Ryul CHANG
- 申请人: Myoung-Kyu PARK , Byung-Sun KIM , Tae-Jung LEE , Dong-Ryul CHANG
- 申请人地址: KR Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Gyeonggi-do
- 优先权: KR2008-0046620 20080520
- 主分类号: G11C16/04
- IPC分类号: G11C16/04 ; H01L29/788
摘要:
A nonvolatile memory device including a plurality of word lines; a plurality of bit lines intersecting the word lines; a plurality of memory cells corresponding to intersections of the word lines and the bit lines; a common control gate line commonly connected to the memory cells; and a common erasing gate line commonly connected to the memory cells.
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