发明申请
US20090290417A1 NONVOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME 审中-公开
非易失性存储器件及其制造方法

NONVOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
摘要:
A nonvolatile memory device including a plurality of word lines; a plurality of bit lines intersecting the word lines; a plurality of memory cells corresponding to intersections of the word lines and the bit lines; a common control gate line commonly connected to the memory cells; and a common erasing gate line commonly connected to the memory cells.
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