发明申请
- 专利标题： RECLAMATION METHOD OF SEMICONDUCTOR WAFER
- 专利标题（中）： 半导体波形的回收方法
-
申请号： US12468308申请日： 2009-05-19
-
公开(公告)号： US20090291621A1公开(公告)日： 2009-11-26
- 发明人: Yasunori YAMADA
- 申请人： Yasunori YAMADA
- 申请人地址： JP Tokyo
- 专利权人： SUMCO CORPORATION
- 当前专利权人： SUMCO CORPORATION
- 当前专利权人地址： JP Tokyo
- 优先权： JP2008-133894 20080522
- 主分类号： H01L21/463
- IPC分类号： H01L21/463
摘要：
Chamfer correction is performed to a chamfered portion at least on a front side of a silicon wafer after an incoming inspection. Thereby, a thickness of the chamfered portion on the front side of the wafer is restored, and thus the number of reclamation cycles of the silicon wafer can be increased. In addition, the chamfered portion is not deformed even after reclamation is repeated for a plurality of times.
公开/授权文献
- US08092278B2 Reclamation method of semiconductor wafer 公开/授权日：2012-01-10