发明申请
US20090294759A1 Stack structure comprising epitaxial graphene, method of forming the stack structure, and electronic device comprising the stack structure
有权
包括外延石墨烯的堆叠结构，形成堆叠结构的方法以及包括堆叠结构的电子器件
- 专利标题： Stack structure comprising epitaxial graphene, method of forming the stack structure, and electronic device comprising the stack structure
- 专利标题（中）： 包括外延石墨烯的堆叠结构，形成堆叠结构的方法以及包括堆叠结构的电子器件
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申请号： US12230487申请日： 2008-08-29
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公开(公告)号： US20090294759A1公开(公告)日： 2009-12-03
- 发明人: Yun-sung Woo , Sun-ae Seo , Dong-chul Kim , Hyun-jong Chung , Dae-young Jeon
- 申请人： Yun-sung Woo , Sun-ae Seo , Dong-chul Kim , Hyun-jong Chung , Dae-young Jeon
- 专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 优先权： KR10-2008-0050467 20080529
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L21/20
摘要：
Provided are a stack structure including an epitaxial graphene, a method of forming the stack structure, and an electronic device including the stack structure. The stack structure includes: a Si substrate; an under layer formed on the Si substrate; and at least one epitaxial graphene layer formed on the under layer.
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