公开(公告)号：US07994815B2

公开(公告)日：2011-08-09

申请号：US11902416

申请日：2007-09-21

申请人： Hyun-jong Chung ,  Sun-ae Seo ,  Chang-won Lee ,  Dae-young Jeon ,  Ran-ju Jung ,  Dong-chul Kim ,  Ji-young Bae

发明人： Hyun-jong Chung ,  Sun-ae Seo ,  Chang-won Lee ,  Dae-young Jeon ,  Ran-ju Jung ,  Dong-chul Kim ,  Ji-young Bae

IPC分类号： H03K19/173

CPC分类号： H03K3/40 ,  G11C13/00 ,  G11C13/0007 ,  G11C2213/32 ,  G11C2213/77

摘要： Provided is a cross-point latch and a method of operating the cross-point latch. The cross-point latch includes a signal line, two control lines crossing the signal line, and unipolar switches disposed at crossing points between the signal line and the control lines.

摘要翻译： 提供了交叉点锁存器和操作交叉点锁存器的方法。 交叉点锁存器包括信号线，与信号线交叉的两个控制线，以及设置在信号线与控制线之间的交叉点处的单极开关。

公开(公告)号：US07852738B2

公开(公告)日：2010-12-14

申请号：US11965836

申请日：2007-12-28

申请人： Dae-young Jeon ,  Dong-ki Min ,  Hyoung-soo Ko ,  Seung-bum Hong

发明人： Dae-young Jeon ,  Dong-ki Min ,  Hyoung-soo Ko ,  Seung-bum Hong

IPC分类号： G11B9/00

CPC分类号： G11B9/02 ,  B82Y10/00 ,  G11B9/1409

摘要： A storage apparatus includes a ferroelectric recording medium, an electric field sensor including a source region, a drain region and a resistance region electrically connecting the source region to the drain region and having a resistance, which varies according to an intensity of an electric field due to a polarization voltage of an electric domain of the recording medium, a voltage applying unit applying a drain voltage between the source region and the drain region, and a reproducing signal detection unit including at least one negative resistor installed in an electric circuit connecting the drain region to the voltage applying unit, and detecting a change in a voltage between the drain region and the at least one negative resistor.

摘要翻译： 存储装置包括铁电记录介质，电场传感器，其包括源极区域，漏极区域和将源极区域电连接到漏极区域并具有电阻的电阻区域，该电阻器根据电场的强度而变化 至所述记录介质的电畴的极化电压，在所述源极区域和所述漏极区域之间施加漏极电压的电压施加单元，以及再现信号检测单元，所述再现信号检测单元包括安装在连接所述漏极 区域，并且检测漏极区域和至少一个负电阻器之间的电压变化。

公开(公告)号：US20090141396A1

公开(公告)日：2009-06-04

申请号：US12126427

申请日：2008-05-23

申请人： Hyoung-soo KO ,  Seung-bum Hong ,  Chul-min Park ,  Dae-young Jeon

发明人： Hyoung-soo KO ,  Seung-bum Hong ,  Chul-min Park ,  Dae-young Jeon

IPC分类号： G11B5/37

CPC分类号： G11B9/02 ,  B82Y10/00 ,  G11B9/1409

摘要： An electric field effect read/write head for recording/reproducing information on/from a ferroelectric recording medium using an electric field effect includes a semiconductor substrate, a recess portion formed in an upper surface of the semiconductor substrate facing the ferroelectric recording medium, and a recording/reproduction portion provided in the recess portion.

摘要翻译： 一种用于使用电场效应从铁电记录介质上记录/再现信息的电场效应读/写头包括半导体衬底，形成在半导体衬底的面对铁电记录介质的上表面的凹部，以及 记录/再现部分。

公开(公告)号：US20080279062A1

公开(公告)日：2008-11-13

申请号：US11930223

申请日：2007-10-31

申请人： Dae-young Jeon ,  Hyoung-soo Ko ,  Seung-bum Hong ,  Chul-min Park

发明人： Dae-young Jeon ,  Hyoung-soo Ko ,  Seung-bum Hong ,  Chul-min Park

IPC分类号： G11B5/00

CPC分类号： G11B9/02

摘要： Provided are an electric field read/write device and a method of driving an electric field read/write device. The method including an electric field read/write head comprising a resistance region disposed between a source region and a drain region and a writing electrode disposed on the resistance region, wherein the method includes: applying a controlling voltage to the writing electrode, wherein the controlling voltage is smaller than a threshold voltage which causes polarization of a recording medium, and reproducing data recorded in the recording medium according to change of an amount of a current flowing through the resistance region according to a polarization direction of electric domains of the recording medium.

摘要翻译： 提供电场读/写装置和驱动电场读/写装置的方法。 该方法包括：电场读/写头，包括设置在源极区域和漏极区域之间的电阻区域和设置在电阻区域上的写入电极，其中所述方法包括：向所述写入电极施加控制电压，其中所述控制 电压小于导致记录介质的极化的阈值电压，并且根据记录介质的电畴的偏振方向根据流过电阻区域的电流量的变化再现记录在记录介质中的数据。

公开(公告)号：US20090034405A1

公开(公告)日：2009-02-05

申请号：US11965836

申请日：2007-12-28

申请人： Dae-young JEON ,  Dong-ki MIN ,  Hyoung-soo KO ,  Seung-bum HONG

发明人： Dae-young JEON ,  Dong-ki MIN ,  Hyoung-soo KO ,  Seung-bum HONG

IPC分类号： G11B9/00

CPC分类号： G11B9/02 ,  B82Y10/00 ,  G11B9/1409

摘要： A storage apparatus includes a ferroelectric recording medium, an electric field sensor including a source region, a drain region and a resistance region electrically connecting the source region to the drain region and having a resistance, which varies according to an intensity of an electric field due to a polarization voltage of an electric domain of the recording medium, a voltage applying unit applying a drain voltage between the source region and the drain region, and a reproducing signal detection unit including at least one negative resistor installed in an electric circuit connecting the drain region to the voltage applying unit, and detecting a change in a voltage between the drain region and the at least one negative resistor.

摘要翻译： 存储装置包括铁电记录介质，电场传感器，其包括源极区域，漏极区域和将源极区域电连接到漏极区域并具有电阻的电阻区域，该电阻器根据电场的强度而变化 至所述记录介质的电畴的极化电压，在所述源极区域和所述漏极区域之间施加漏极电压的电压施加单元，以及再现信号检测单元，所述再现信号检测单元包括安装在连接所述漏极 区域，并且检测漏极区域和至少一个负电阻器之间的电压变化。

公开(公告)号：US20090034120A1

公开(公告)日：2009-02-05

申请号：US12038878

申请日：2008-02-28

申请人： Hyoung-soo KO ,  Ju-hwan Jung ,  Seung-bum Hong ,  Chul-min Park ,  Dae-young Jeon

发明人： Hyoung-soo KO ,  Ju-hwan Jung ,  Seung-bum Hong ,  Chul-min Park ,  Dae-young Jeon

IPC分类号： G11B5/187 ,  G11B9/02

CPC分类号： G11B9/02 ,  B82Y10/00 ,  G11B9/1409

摘要： An electric field read/write head, a method of manufacturing the electric field read/write head, and an information storage device including the electric field read/write head are provided. The electric field read/write head includes: a substrate having a first surface facing a recording medium and a second surface that is perpendicular to the first surface; and a protrusion formed on the second surface and having at least a portion facing the recording medium, wherein a resistance sensor comprising a source, a drain, and a channel is included in the protrusion. An insulating layer and electric field shield layers are further sequentially formed on opposite sides of the protrusion, respectively, and at least one of the electric field shield layers is a write electrode.

摘要翻译： 提供电场读/写头，制造电场读/写头的方法，以及包括电场读/写头的信息存储装置。 电场读/写头包括：具有面向记录介质的第一表面和垂直于第一表面的第二表面的基板; 以及形成在所述第二表面上并且具有面向所述记录介质的至少一部分的突起，其中包括源极，漏极和沟道的电阻传感器包括在所述突起中。 绝缘层和电场屏蔽层分别进一步依次形成在突起的相对侧上，并且电场屏蔽层中的至少一个是写入电极。

公开(公告)号：US08159037B2

公开(公告)日：2012-04-17

申请号：US12230487

申请日：2008-08-29

申请人： Yun-sung Woo ,  Sun-ae Seo ,  Dong-chul Kim ,  Hyun-jong Chung ,  Dae-young Jeon

发明人： Yun-sung Woo ,  Sun-ae Seo ,  Dong-chul Kim ,  Hyun-jong Chung ,  Dae-young Jeon

IPC分类号： H01L21/02

CPC分类号： H01L21/02491 ,  B82Y10/00 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02447 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02516 ,  H01L21/02527 ,  H01L21/0262 ,  H01L29/045 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/16 ,  H01L29/1606 ,  H01L29/2003 ,  H01L29/267 ,  H01L29/7781 ,  H01L29/78684 ,  Y10T428/12674

摘要： Provided are a stack structure including an epitaxial graphene, a method of forming the stack structure, and an electronic device including the stack structure. The stack structure includes: a Si substrate; an under layer formed on the Si substrate; and at least one epitaxial graphene layer formed on the under layer.

摘要翻译： 提供了包括外延石墨烯的堆叠结构，形成堆叠结构的方法和包括堆叠结构的电子器件。 堆叠结构包括：Si衬底; 在Si衬底上形成的底层; 以及形成在下层上的至少一个外延石墨烯层。

公开(公告)号：US08107354B2

公开(公告)日：2012-01-31

申请号：US12038878

申请日：2008-02-28

申请人： Hyoung-soo Ko ,  Ju-hwan Jung ,  Seung-bum Hong ,  Chul-min Park ,  Dae-young Jeon

发明人： Hyoung-soo Ko ,  Ju-hwan Jung ,  Seung-bum Hong ,  Chul-min Park ,  Dae-young Jeon

IPC分类号： G11B5/187 ,  G11B9/02

CPC分类号： G11B9/02 ,  B82Y10/00 ,  G11B9/1409

摘要： An electric field read/write head, a method of manufacturing the electric field read/write head, and an information storage device including the electric field read/write head are provided. The electric field read/write head includes: a substrate having a first surface facing a recording medium and a second surface that is perpendicular to the first surface; and a protrusion formed on the second surface and having at least a portion facing the recording medium, wherein a resistance sensor comprising a source, a drain, and a channel is included in the protrusion. An insulating layer and electric field shield layers are further sequentially formed on opposite sides of the protrusion, respectively, and at least one of the electric field shield layers is a write electrode.

摘要翻译： 提供电场读/写头，制造电场读/写头的方法，以及包括电场读/写头的信息存储装置。 电场读/写头包括：具有面向记录介质的第一表面和垂直于第一表面的第二表面的基板; 以及形成在所述第二表面上并且具有面向所述记录介质的至少一部分的突起，其中包括源极，漏极和沟道的电阻传感器包括在所述突起中。 绝缘层和电场屏蔽层分别进一步依次形成在突起的相对侧上，并且电场屏蔽层中的至少一个是写入电极。

公开(公告)号：US20090294759A1

公开(公告)日：2009-12-03

申请号：US12230487

申请日：2008-08-29

申请人： Yun-sung Woo ,  Sun-ae Seo ,  Dong-chul Kim ,  Hyun-jong Chung ,  Dae-young Jeon

发明人： Yun-sung Woo ,  Sun-ae Seo ,  Dong-chul Kim ,  Hyun-jong Chung ,  Dae-young Jeon

IPC分类号： H01L29/06 ,  H01L21/20

CPC分类号： H01L21/02491 ,  B82Y10/00 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02447 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02516 ,  H01L21/02527 ,  H01L21/0262 ,  H01L29/045 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/16 ,  H01L29/1606 ,  H01L29/2003 ,  H01L29/267 ,  H01L29/7781 ,  H01L29/78684 ,  Y10T428/12674

摘要： Provided are a stack structure including an epitaxial graphene, a method of forming the stack structure, and an electronic device including the stack structure. The stack structure includes: a Si substrate; an under layer formed on the Si substrate; and at least one epitaxial graphene layer formed on the under layer.

摘要翻译： 提供了包括外延石墨烯的堆叠结构，形成堆叠结构的方法和包括堆叠结构的电子器件。 堆叠结构包括：Si衬底; 在Si衬底上形成的底层; 以及形成在下层上的至少一个外延石墨烯层。

公开(公告)号：US20120098144A1

公开(公告)日：2012-04-26

申请号：US13280824

申请日：2011-10-25

申请人： Gyu-Tae KIM ,  So-Jeong PARK ,  Dae-Young JEON ,  Yun-Jeong KIM

发明人： Gyu-Tae KIM ,  So-Jeong PARK ,  Dae-Young JEON ,  Yun-Jeong KIM

IPC分类号： H01L23/48 ,  H01L21/768

CPC分类号： H01L23/4824 ,  B81C1/00166 ,  H01L24/06 ,  H01L2924/00013 ,  H01L2924/01322 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00

摘要： Provided is a vertical electrode structure using a trench and a method of manufacturing the vertical electrode structure. The method of forming a vertical electrode structure using a trench includes steps of: forming the trench on a predetermined region of a semiconductor substrate; and forming electrode layers in predetermined regions of inner and outer portions of the trench. In this manner, the electrode deposition in the vertical direction is established by using the trench, so that it is possible to form a deposited electrode having a size of several hundred nm or less by a short processing time and a low processing cost.

摘要翻译： 提供了使用沟槽的垂直电极结构和制造垂直电极结构的方法。 使用沟槽形成垂直电极结构的方法包括以下步骤：在半导体衬底的预定区域上形成沟槽; 以及在所述沟槽的内部和外部部分的预定区域中形成电极层。 以这种方式，通过使用沟槽来建立在垂直方向上的电极沉积，使得可以通过短的处理时间和低的处理成本形成尺寸为几百纳米或更小的沉积电极。