发明申请
US20090294775A1 HEXAGONAL WURTZITE TYPE EPITAXIAL LAYER POSSESSING A LOW ALKALI-METAL CONCENTRATION AND METHOD OF CREATING THE SAME
有权
具有低碱金属浓度的六角形WURTZITE型外延层及其制造方法
- 专利标题： HEXAGONAL WURTZITE TYPE EPITAXIAL LAYER POSSESSING A LOW ALKALI-METAL CONCENTRATION AND METHOD OF CREATING THE SAME
- 专利标题（中）： 具有低碱金属浓度的六角形WURTZITE型外延层及其制造方法
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申请号： US12474143申请日： 2009-05-28
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公开(公告)号： US20090294775A1公开(公告)日： 2009-12-03
- 发明人: Makoto Saito , Shin-Ichiro Kawabata , Derrick S. Kamber , Steven P. DenBaars , James S. Speck , Shuji Nakamura
- 申请人： Makoto Saito , Shin-Ichiro Kawabata , Derrick S. Kamber , Steven P. DenBaars , James S. Speck , Shuji Nakamura
- 申请人地址： US CA Oakland
- 专利权人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- 当前专利权人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- 当前专利权人地址： US CA Oakland
- 主分类号： H01L29/20
- IPC分类号： H01L29/20 ; C30B25/02 ; C30B28/14 ; C30B30/00
摘要：
A method of obtaining a hexagonal würtzite type epitaxial layer with a low impurity concentration of alkali-metal by using a hexagonal würtzite substrate possessing a higher impurity concentration of alkali-metal, wherein a surface of the substrate upon which the epitaxial layer is grown has a crystal plane which is different from the c-plane.
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