发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- 专利标题（中）： 半导体器件及其制造方法
-
申请号： US12521936申请日： 2008-01-15
-
公开(公告)号： US20090294951A1公开(公告)日： 2009-12-03
- 发明人: Hideya Murai , Yuji Kayashima , Takehiko Maeda , Shintaro Yamamichi , Takuo Funaya
- 申请人： Hideya Murai , Yuji Kayashima , Takehiko Maeda , Shintaro Yamamichi , Takuo Funaya
- 申请人地址： JP Minato-ku
- 专利权人： NEC CORPORATION
- 当前专利权人： NEC CORPORATION
- 当前专利权人地址： JP Minato-ku
- 优先权： JP2007-018141 20070129
- 国际申请： PCT/JP2008/050343 WO 20080115
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L21/768
摘要：
A semiconductor device that can be readily manufactured, can include a large number of pads, and can be thin, and a method for manufacturing the same are provided. The semiconductor device is characterized in that the semiconductor device includes an LSI chip, an insulating layer provided on the LSI chip and made of a nonphotosensitive resin, the insulating layer including a via hole in the position corresponding to an externally connected pad, and a wiring layer extending along the insulating layer through the via hole to the externally connected pad, and at least part of the via hole is formed by irradiating the insulating layer with laser light.