发明申请
- 专利标题： FLASH MEMORY DEVICES AND METHODS OF PROGRAMMING THE SAME BY OVERLAPPING PROGRAMMING OPERATIONS FOR MULTIPLE MATS
- 专利标题（中）： 闪存存储器件及其编程方法通过重写多个程序的编程操作
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申请号： US12541429申请日： 2009-08-14
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公开(公告)号： US20090296472A1公开(公告)日： 2009-12-03
- 发明人: Jin-Sung Park , Dae-Seok Byeon
- 申请人： Jin-Sung Park , Dae-Seok Byeon
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 优先权： KR2004-109827 20041221
- 主分类号： G11C16/04
- IPC分类号： G11C16/04
摘要：
A flash memory device is programmed by loading first data into a page buffer of a first mat. Second data is loaded into a page buffer of a second mat while programming the first data in a first memory block of the first mat.
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