发明申请
- 专利标题: Structure and Method to Fabricate Metal Gate High-K Devices
- 专利标题(中): 制造金属栅极高K器件的结构和方法
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申请号: US12542855申请日: 2009-08-18
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公开(公告)号: US20090302396A1公开(公告)日: 2009-12-10
- 发明人: Tze-Chiang Chen , Bruce B. Doris , Vijay Narayanan , Vamsi Paruchuri
- 申请人: Tze-Chiang Chen , Bruce B. Doris , Vijay Narayanan , Vamsi Paruchuri
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 主分类号: H01L27/092
- IPC分类号: H01L27/092 ; H01L29/78
摘要:
Disclosed is a method to fabricate a semiconductor device, and a device fabricated in accordance with the method. The method includes providing a substrate comprised of silicon; performing a shallow trench isolation process to delineate nFET and pFET active areas and, within each active area, forming a gate structure over a surface of the substrate, the gate structure comprising in order from the surface of the substrate, a layer of high dielectric constant oxide, a layer comprised of a metal, a layer comprised of amorphous silicon, and a layer comprised of polycrystalline silicon. The layer comprised of amorphous silicon is provided to substantially prevent regrowth of the high dielectric constant oxide layer in a vertical direction during at least a deposition and processing of the polycrystalline silicon layer and/or metal layer.