发明申请
- 专利标题： METHOD FOR FORMING SLOT VIA BITLINE FOR MRAM DEVICES
- 专利标题（中）： 用于通过MRAM器件的位线形成槽的方法
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申请号： US12539942申请日： 2009-08-12
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公开(公告)号： US20090302405A1公开(公告)日： 2009-12-10
- 发明人: Michael C. Gaidis , Carl Radens , Lawrence A. Clevenger , Timothy J. Dalton , Louis L. C. Hsu , Keith Kwong Hon Wong , Chih-Chao Yang
- 申请人： Michael C. Gaidis , Carl Radens , Lawrence A. Clevenger , Timothy J. Dalton , Louis L. C. Hsu , Keith Kwong Hon Wong , Chih-Chao Yang
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L29/82
- IPC分类号： H01L29/82 ; H01L21/00
摘要：
A magnetic random access memory (MRAM) device includes a magnetic tunnel junction (MTJ) stack formed over a lower wiring level, a hardmask formed on the MTJ stack, and an upper wiring level formed over the hardmask. The upper wiring level includes a slot via bitline formed therein, the slot via bitline in contact with the hardmask and in contact with an etch stop layer partially surrounding sidewalls of the hardmask.
公开/授权文献
- US07825420B2 Method for forming slot via bitline for MRAM devices 公开/授权日：2010-11-02