发明申请
- 专利标题: METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- 专利标题(中): 制造半导体器件的方法
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申请号: US12476491申请日: 2009-06-02
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公开(公告)号: US20090302456A1公开(公告)日: 2009-12-10
- 发明人: Yoshiaki OIKAWA , Hironobu SHOJI , Shingo EGUCHI
- 申请人: Yoshiaki OIKAWA , Hironobu SHOJI , Shingo EGUCHI
- 申请人地址: JP Atsugi-shi
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Atsugi-shi
- 优先权: JP2008-149693 20080606
- 主分类号: H01L23/12
- IPC分类号: H01L23/12 ; H01L21/58
摘要:
To provide a simple method for manufacturing a semiconductor device in which deterioration in characteristics due to electrostatic discharge is reduced, a plurality of element layers each having a semiconductor integrated circuit and an antenna are sealed between a first insulator and a second insulator; a layered structure having a first conductive layer formed on a surface of the first insulator, the first insulator, the element layers, the second insulator, and a second conductive layer formed on a surface of the second insulator is formed; and the first insulator and the second insulator are melted, whereby the layered structure is divided so as to include at least one of the semiconductor integrated circuits and one of the antennas.
公开/授权文献
- US08609464B2 Method for shielding semiconductor device 公开/授权日:2013-12-17
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