发明申请
- 专利标题： Two-Terminal Reversibly Switchable Memory Device
- 专利标题（中）： 双端可逆切换存储器
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申请号： US12456627申请日： 2009-06-18
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公开(公告)号： US20090303772A1公开(公告)日： 2009-12-10
- 发明人: Darrell Rinerson , Christophe Chevallier , Wayne Kinney , Roy Lambertson , John E. Sanchez, JR. , Lawrence Schloss , Philip Swab , Edmond Ward
- 申请人： Darrell Rinerson , Christophe Chevallier , Wayne Kinney , Roy Lambertson , John E. Sanchez, JR. , Lawrence Schloss , Philip Swab , Edmond Ward
- 申请人地址： US CA Sunnyvale
- 专利权人： UNITY SEMICONDUCTOR CORPORATION
- 当前专利权人： UNITY SEMICONDUCTOR CORPORATION
- 当前专利权人地址： US CA Sunnyvale
- 主分类号： G11C11/00
- IPC分类号： G11C11/00 ; H01L45/00 ; G11C7/00
摘要：
A memory using mixed valence conductive oxides is disclosed. The memory includes a mixed valence conductive oxide that is less conductive in its oxygen deficient state and a mixed electronic ionic conductor that is an electrolyte to oxygen and promotes an electric field effective to cause oxygen ionic motion.
信息查询
