发明申请
US20090306941A1 Structure Model description and use for scatterometry-based semiconductor manufacturing process metrology
审中-公开
结构模型描述和用于基于散射的半导体制造过程计量学
- 专利标题: Structure Model description and use for scatterometry-based semiconductor manufacturing process metrology
- 专利标题(中): 结构模型描述和用于基于散射的半导体制造过程计量学
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申请号: US12227387申请日: 2007-05-14
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公开(公告)号: US20090306941A1公开(公告)日: 2009-12-10
- 发明人: Michael Kotelyanskii , Xueping Ru , Robert G. Wolf , Yue Yang
- 申请人: Michael Kotelyanskii , Xueping Ru , Robert G. Wolf , Yue Yang
- 国际申请: PCT/US2007/011586 WO 20070514
- 主分类号: G06F17/50
- IPC分类号: G06F17/50
摘要:
A method includes accessing a structure model defining a cross-sectional profile of a structure on a sample. The cross-sectional profile is at least partially defined using a set of blocks. Each of the blocks includes a number of vertices. One or more of the vertices are expressed using one or more algebraic relationships between a number of parameters corresponding to the structure. Information is evaluated from the structure model to produce expected metrology data for a scatterometry-based optical metrology. The expected metrology data is suitable for use for determining one or more of the number of parameters corresponding to the structure. Apparatus are also disclosed.
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