发明申请
- 专利标题： Semiconductor device having a power cutoff transistor
- 专利标题（中）： 具有功率截止晶体管的半导体器件
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申请号： US12453503申请日： 2009-05-13
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公开(公告)号： US20090309170A1公开(公告)日： 2009-12-17
- 发明人: Masakatsu Nakai
- 申请人： Masakatsu Nakai
- 申请人地址： JP Tokyo
- 专利权人： Sony Corporation
- 当前专利权人： Sony Corporation
- 当前专利权人地址： JP Tokyo
- 优先权： JP2008-153083 20080611
- 主分类号： H01L27/088
- IPC分类号： H01L27/088
摘要：
Disclosed herein is a semiconductor device having a power cutoff transistor including a semiconductor substrate of a first conductivity type; and first and second wells of the first conductivity type formed to be spaced from each other in the semiconductor substrate.
公开/授权文献
- US08008733B2 Semiconductor device having a power cutoff transistor 公开/授权日：2011-08-30
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