发明申请
- 专利标题: SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- 专利标题(中): 半导体器件及其制造方法
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申请号: US12483751申请日: 2009-06-12
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公开(公告)号: US20090309218A1公开(公告)日: 2009-12-17
- 发明人: Michihiro KAWASHITA , Yasuhiro YOSHIMURA , Naotaka TANAKA , Takahiro NAITO , Takashi AKAZAWA
- 申请人: Michihiro KAWASHITA , Yasuhiro YOSHIMURA , Naotaka TANAKA , Takahiro NAITO , Takashi AKAZAWA
- 申请人地址: JP Tokyo
- 专利权人: RENESAS TECHNOLOGY CORP.
- 当前专利权人: RENESAS TECHNOLOGY CORP.
- 当前专利权人地址: JP Tokyo
- 优先权: JP2008-157844 20080617
- 主分类号: H01L23/48
- IPC分类号: H01L23/48 ; H01L21/44
摘要:
When a through-hole electrode and a rear-surface wire are formed on a rear surface of a chip, a convex portion is formed on the rear surface of the chip due to a rear-surface wiring pad which is a part of the through-hole electrode and the rear-surface wire. This causes the air leakage when the chip is sucked, and therefore, the reduction of the sucking force of the chip occurs. A concave portion is formed in advance in a region where a rear-surface wiring pad and a rear-surface wire are formed. The rear-surface wiring pad and the rear-surface wire are provided inside the concave portion. Thus, a flatness of the rear surface of the chip is ensured by a convex portion caused by thicknesses of the rear-surface wiring pad and the rear-surface wire, so that the reduction of the sucking force does not occur when the chip is handled.
公开/授权文献
- US08178977B2 Semiconductor device and method of manufacturing the same 公开/授权日:2012-05-15
信息查询
IPC分类: