发明申请
- 专利标题： Silicon single electron device
- 专利标题（中）： 硅单电子器件
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申请号： US12157757申请日： 2008-06-13
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公开(公告)号： US20090309229A1公开(公告)日： 2009-12-17
- 发明人: Susan Angus , Andrew Steven Dzurak , Robert Graham Clark , Andrew Ferguson
- 申请人： Susan Angus , Andrew Steven Dzurak , Robert Graham Clark , Andrew Ferguson
- 专利权人： Qucor Pty Ltd.
- 当前专利权人： Qucor Pty Ltd.
- 主分类号： H01L23/52
- IPC分类号： H01L23/52 ; H01L21/44
摘要：
A silicon integrated circuit device comprising a near intrinsic silicon substrate in which there are one or more ohmic contact regions. An insulating layer lies above the substrate, and on top of the insulating layer is a lower layer of one or more aluminium gates. The surface of each of the lower gates is oxidised to insulate them from an upper aluminium gate that extends over the lower gates.
公开/授权文献
- US07755078B2 Silicon single electron device 公开/授权日：2010-07-13
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