发明申请
- 专利标题： PHOTOLITHOGRAPHY
- 专利标题（中）： 光刻技术
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申请号： US12375945申请日： 2007-07-31
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公开(公告)号： US20090311623A1公开(公告)日： 2009-12-17
- 发明人: Hans Kwinten , Peter Zanbergen , David Van Steenwinckel , Anja Monique Vanleenhove
- 申请人： Hans Kwinten , Peter Zanbergen , David Van Steenwinckel , Anja Monique Vanleenhove
- 申请人地址： NL Eindhoven
- 专利权人： NXP, B.V.
- 当前专利权人： NXP, B.V.
- 当前专利权人地址： NL Eindhoven
- 优先权： EP06118304.2 20060802
- 国际申请： PCT/IB07/53014 WO 20070731
- 主分类号： G03F7/20
- IPC分类号： G03F7/20 ; G03F7/004
摘要：
The invention relates to a method of photolithography comprising the steps of: providing a substrate and forming a layer of a photoresist (100) on the substrate, performing a first exposure (120) in which a predetermined part of the layer of photoresist is irradiated through a mask having a pattern for forming a latent image of said pattern in the layer of the photoresist, performing a pretreatment (130) on the layer of the photoresist to remove a predetermined part of the latent image before performing the fixation (140). The method provides an improved process window. The invention further relates to a photoresist for use within the method of the invention.
公开/授权文献
- US08257912B2 Photolithography 公开/授权日：2012-09-04