发明申请
- 专利标题： Polishing Composition for Silicon Wafer and Polishing Method of Silicon Wafer
- 专利标题（中）： 硅晶片抛光组合物和硅晶片抛光方法
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申请号： US12307056申请日： 2006-10-18
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公开(公告)号： US20090311947A1公开(公告)日： 2009-12-17
- 发明人: Naoyuki Iwata , Isao Nagashima
- 申请人： Naoyuki Iwata , Isao Nagashima
- 申请人地址： US AZ Tempe
- 专利权人： Dupont AurProducts NanoMaterials Limited Company
- 当前专利权人： Dupont AurProducts NanoMaterials Limited Company
- 当前专利权人地址： US AZ Tempe
- 优先权： JP2006-185974 20060705
- 国际申请： PCT/JP2006/320758 WO 20061018
- 主分类号： B24B37/04
- IPC分类号： B24B37/04 ; C09K3/14 ; H01L21/304
摘要：
The present invention provides a polishing composition used in a polishing process of a silicon wafer, which has an improved smoothness and is environment-friendly. The polishing composition for the silicon wafer of the present invention comprises a metal oxide, an alkaline substance and water, wherein the alkaline substance is guanidines. Another polishing composition for a silicon wafer of the present invention comprises an alkaline substance and water, wherein the alkaline substance is guanidines. These polishing compositions may further comprise a chelating agent. The metal oxide is preferably a cerium oxide or a silicon oxide. The present invention encompasses a polishing method using the above polishing composition and a kit for the above polishing composition.
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