发明申请
- 专利标题： TRANSISTOR GATE ELECTRODE HAVING CONDUCTOR MATERIAL LAYER
- 专利标题（中）： 具有导体材料层的晶体管栅极电极
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申请号： US12553033申请日： 2009-09-02
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公开(公告)号： US20090315076A1公开(公告)日： 2009-12-24
- 发明人: Anand Murthy , Boyan Boyanov , Suman Datta , Brian S. Doyle , Been-Yih Jin , Shaofeng Yu , Robert Chau
- 申请人： Anand Murthy , Boyan Boyanov , Suman Datta , Brian S. Doyle , Been-Yih Jin , Shaofeng Yu , Robert Chau
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/28
摘要：
Various embodiments of the invention relate to a PMOS device having a transistor channel of silicon germanium material on a substrate, a gate dielectric having a dielectric constant greater than that of silicon dioxide on the channel, a gate electrode conductor material having a work function in a range between a valence energy band edge and a conductor energy band edge for silicon on the gate dielectric, and a gate electrode semiconductor material on the gate electrode conductor material.
公开/授权文献
- US07871916B2 Transistor gate electrode having conductor material layer 公开/授权日：2011-01-18
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