发明申请
US20090315115A1 Implantation for shallow trench isolation (STI) formation and for stress for transistor performance enhancement
审中-公开
用于浅沟槽隔离（STI）形成和用于晶体管性能增强的应力的植入
- 专利标题： Implantation for shallow trench isolation (STI) formation and for stress for transistor performance enhancement
- 专利标题（中）： 用于浅沟槽隔离（STI）形成和用于晶体管性能增强的应力的植入
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申请号： US12214854申请日： 2008-06-23
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公开(公告)号： US20090315115A1公开(公告)日： 2009-12-24
- 发明人: Beichao Zhang , Johnny Widodo , Juan Boon Tan , Yong Kong Siew , Fan Zhang , Haifeng Sheng , Wenhe Lin , Young Way Teh , Jinping Liu , Vincent Ho , Liang Choo Hsia
- 申请人： Beichao Zhang , Johnny Widodo , Juan Boon Tan , Yong Kong Siew , Fan Zhang , Haifeng Sheng , Wenhe Lin , Young Way Teh , Jinping Liu , Vincent Ho , Liang Choo Hsia
- 申请人地址： SG Singapore
- 专利权人： Chartered Semiconductor Manufacturing, Ltd.
- 当前专利权人： Chartered Semiconductor Manufacturing, Ltd.
- 当前专利权人地址： SG Singapore
- 主分类号： H01L21/8234
- IPC分类号： H01L21/8234 ; H01L27/088
摘要：
A method (and semiconductor device) of fabricating a semiconductor device provides a shallow trench isolation (STI) structure or region by implanting ions in the STI region. After implantation, the region (of substrate material and ions of a different element) is thermally annealed producing a dielectric material operable for isolating two adjacent field-effect transistors (FET). This eliminates the conventional steps of removing substrate material to form the trench and refilling the trench with dielectric material. Implantation of nitrogen ions into an STI region adjacent a p-type FET applies a compressive stress to the transistor channel region to enhance transistor performance. Implantation of oxygen ions into an STI region adjacent an n-type FET applies a tensile stress to the transistor channel region to enhance transistor performance.