发明申请
- 专利标题： Methods of forming improved electromigration resistant copper films and structures formed thereby
- 专利标题（中）： 形成改善的电迁移铜膜和由此形成的结构的方法
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申请号： US12215987申请日： 2008-06-30
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公开(公告)号： US20090321935A1公开(公告)日： 2009-12-31
- 发明人: Kevin O'Brien , Florian Gstrein , Sridhar Balakrishnan
- 申请人： Kevin O'Brien , Florian Gstrein , Sridhar Balakrishnan
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L23/532
摘要：
Methods and associated structures of forming a microelectronic structure are described. Those methods may comprise forming a doping material on an overburden region of a conductive structure, diffusing a portion of the doping material into a portion of the conductive structure, and then removing the overburden region.
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