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发明申请
US20090322427A1 TRANSISTOR AND ROUTING LAYOUT FOR A RADIO FREQUENCY INTEGRATED CMOS POWER AMPLIFIER DEVICE 有权
无线电频率集成CMOS功率放大器器件的晶体管和路由布局

  • 专利标题： TRANSISTOR AND ROUTING LAYOUT FOR A RADIO FREQUENCY INTEGRATED CMOS POWER AMPLIFIER DEVICE
  • 专利标题（中）： 无线电频率集成CMOS功率放大器器件的晶体管和路由布局
  • 申请号： US12164219
    申请日： 2008-06-30
  • 公开(公告)号： US20090322427A1
    公开(公告)日： 2009-12-31
  • 发明人: Ofir Degani , Mark Ruberto
  • 申请人： Ofir Degani , Mark Ruberto
  • 主分类号： H03F3/45
  • IPC分类号： H03F3/45
TRANSISTOR AND ROUTING LAYOUT FOR A RADIO FREQUENCY INTEGRATED CMOS POWER AMPLIFIER DEVICE
摘要：
An integrated CMOS power amplifier system to improve amplifier performance, the integrated CMOS power amplifier system including a plurality of differential main amplifier cores, a plurality of ground pads, and a plurality of routes to connect the plurality of differential main amplifier cores to the plurality of ground pads. Each differential main amplifier core includes a pair of collocated main amplifier core transistors. Each ground pad is connected to a subset of the differential main amplifier cores. Embodiments of the integrated CMOS power amplifier system decrease parasitic inductance to ground and increase the transconductance and amplification of the integrated CMOS power amplifier system, thus improving performance.
摘要（中）：

一种用于提高放大器性能的集成CMOS功率放大器系统，包括多个差分主放大器核心，多个接地焊盘以及将多个差分主放大器核连接到多个接地焊盘的多条路线的集成CMOS功率放大器系统 接地垫 每个差分主放大器核心包括一对并置的主放大器核心晶体管。 每个接地焊盘连接到差分主放大器核心的子集。 集成CMOS功率放大器系统的实施例减小对地的寄生电感，并增加集成CMOS功率放大器系统的跨导和放大，从而提高性能。

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