发明申请
US20090323406A1 MAGNETIC MEMORY ELEMENT, AND METHOD OF MANUFACTURING MEMORY ELEMENT
审中-公开
磁记忆元件，以及制造记忆元件的方法
- 专利标题： MAGNETIC MEMORY ELEMENT, AND METHOD OF MANUFACTURING MEMORY ELEMENT
- 专利标题（中）： 磁记忆元件，以及制造记忆元件的方法
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申请号： US12404781申请日： 2009-03-16
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公开(公告)号： US20090323406A1公开(公告)日： 2009-12-31
- 发明人: Takao Ochiai , Hiroshi Ashida , Keiichi Nagasaka
- 申请人： Takao Ochiai , Hiroshi Ashida , Keiichi Nagasaka
- 申请人地址： JP Kawasaki-shi
- 专利权人： FUJITSU LIMITED
- 当前专利权人： FUJITSU LIMITED
- 当前专利权人地址： JP Kawasaki-shi
- 优先权： JP2008-171137 20080630
- 主分类号： G11C11/00
- IPC分类号： G11C11/00 ; H01L21/00 ; G11C11/14
摘要：
A magnetic memory element includes an impurity element, and magnetic thin lines to which the impurity element is added to adjust the movement of a magnetic domain wall in a magnetic field. Applying a voltage to the magnetic thin lines controls a position of the magnetic domain wall to invert a magnetization direction of a magnetic recording layer adjacent to the magnetic domain wall, by which information is recorded.
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