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公开(公告)号：US08191934B1
公开(公告)日：2012-06-05
申请号：US12956140
申请日：2010-11-30
申请人： Koji Ohara , Hiroshi Ashida
发明人： Koji Ohara , Hiroshi Ashida
IPC分类号： F16L21/02
CPC分类号： F16L23/0283 , F16L23/22
摘要： A connection structure includes a thin wall stainless steel pipe with a swelling portion, a sandwiching portion forming an inclined pressing surface capable of pressing an inclined surface of the swelling portion, a joint spacer forming a first retention portion pinching a first gasket with respect to the swelling portion as well as having a fitting portion fitted to an outer periphery of an end portion of the thin wall stainless steel pipe, and forming a gasket receiving portion in an outer peripheral side thereof, and a joint having a second retention portion sandwiching and pressing a second gasket to an inner peripheral side facing the gasket receiving portion.
摘要翻译： 连接结构包括具有膨胀部分的薄壁不锈钢管，形成能够挤压膨胀部分的倾斜表面的倾斜按压表面的夹层部分，形成第一保持部分的第一保持部分，该第一保持部分相对于第一垫圈 膨胀部分，以及具有嵌合在薄壁不锈钢管的端部的外周上的嵌合部分，并且在其外周侧形成衬垫接收部分，以及具有夹持和压制的第二保持部分的接头 面向所述垫片接收部的内周侧的第二垫圈。
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公开(公告)号：US20070278603A1
公开(公告)日：2007-12-06
申请号：US11633588
申请日：2006-12-05
IPC分类号： H01L43/00
CPC分类号： G11C19/0808 , G11C11/15 , G11C19/0841
摘要： The magnetic memory device comprises a recording layer 70 formed linearly over a substrate 10 and having a plurality of pinning sites 52 for restricting the motion of domain walls 50 formed at a prescribed pitch and having the regions between the plural pinning sites 52 as recording bits 72. The recording layer 70 includes a first recording layer portion 46 and a second recording layer portion 68, and the second recording layer portion 68 is positioned above the first recording layer portion 46 and has one end connected to one end of the first recording layer portion 46. The second recording layer portion 68 is formed above the first recording layer portion 46, and the end of the second recording layer portion 68 is connected to one end of the first recording layer portion 46, whereby the space required to form the recording layer 70 can be small.
摘要翻译： 磁存储器件包括在衬底10上线性地形成的记录层70，并且具有多个钉扎位置52，用于限制以预定间距形成的畴壁50的运动，并且具有作为记录位72的多个钉扎位置52之间的区域 记录层70包括第一记录层部分46和第二记录层部分68，第二记录层部分68位于第一记录层部分46的上方，其一端连接到第一记录层部分的一端 第二记录层部分68形成在第一记录层部分46的上方，第二记录层部分68的端部连接到第一记录层部分46的一端，由此形成记录层所需的空间 70可以小。
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3.发明申请Manufacturing method of tunnel magnetoresistance element and manufacturing method of nonvolatile memory device 审中-公开隧道磁阻元件的制造方法和非易失性存储器件的制造方法公开(公告)号：US20070277910A1
公开(公告)日：2007-12-06
申请号：US11606164
申请日：2006-11-30
IPC分类号： H01F41/22
CPC分类号： H01F10/3254 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/3163 , G11B5/3906 , G11B5/3909 , G11C11/16 , H01F10/3272 , H01F41/304
摘要： An electrode, an antiferromagnetic film, a ferromagnetic film, a nonmagnetic film, a ferromagnetic film, a tunnel insulating film, a ferromagnetic film, a first Ta film, a Ru film, and a second Ta film are formed in sequence on a substrate. The thickness of the second Ta film is about 0.5 nm. The second Ta film is naturally oxidized after being formed. Then, heat treatment to improve the characteristic of a TMR film is performed. The temperature of this heat treatment is approximately from 200° C. to 300° C. In a conventional manufacturing method, film peeling occurs in this heat treatment, and accompanying this, defects such as occurrence of holes and wrinkles further occur, but in the present method, such an occurrence of defects is prevented since the Ta film is formed at the uppermost surface. Subsequently, the Ta film and so on are patterned.
摘要翻译： 在基板上依次形成电极，反铁磁膜，铁磁膜，非磁性膜，铁磁膜，隧道绝缘膜，铁磁膜，第一Ta膜，Ru膜和第二Ta膜。 第二Ta膜的厚度为约0.5nm。 第二个Ta膜在形成后被自然氧化。 然后，进行热处理以提高TMR膜的特性。 该热处理的温度约为200℃〜300℃。在以往的制造方法中，在该热处理中发生膜剥离，伴随此，进一步发生孔和褶皱等的缺陷， 由于在最上表面形成Ta膜，因此防止了这种缺陷的发生。 随后，对Ta膜等进行图案化。
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公开(公告)号：US20070242505A1
公开(公告)日：2007-10-18
申请号：US11446303
申请日：2006-06-05
IPC分类号： G11C11/14
CPC分类号： G11C11/14 , G11C11/16 , G11C19/0833 , H01L27/228 , H01L43/08
摘要： The magnetic memory device comprises a magnetoresistive effect element 54 including a magnetic layer 42 having a magnetization direction pinned in a first direction, a non-magnetic layer 50 formed on the magnetic layer 42, and a magnetic layer 52 formed on the non-magnetic layer 50 and having a first magnetic domain magnetized in a first direction and a second magnetic domain magnetized in a second direction opposite to the first direction; and a write current applying circuit for flowing a write current in the second magnetic layer 52 in the first direction or the second direction to shift a magnetic domain wall between the first magnetic domain and the second magnetic domain to control a magnetization direction of a part of the magnetic layer 52, opposed to the magnetic layer 42.
摘要翻译： 磁存储器件包括磁阻效应元件54，该磁阻效应元件54包括具有沿第一方向钉扎的磁化方向的磁性层42，形成在磁性层42上的非磁性层50和形成在非磁性层上的磁性层52 并且具有沿第一方向磁化的第一磁畴和沿与第一方向相反的第二方向磁化的第二磁畴; 以及写入电流施加电路，用于沿第一方向或第二方向流动第二磁性层52中的写入电流，以使第一磁畴和第二磁畴之间的磁畴壁移位，以控制第一磁畴和第二磁畴之间的磁化方向 磁性层52与磁性层42相对。
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公开(公告)号：US06333529B1
公开(公告)日：2001-12-25
申请号：US09258266
申请日：1999-02-26
申请人： Hiroshi Ashida , Miki Tomotani
发明人： Hiroshi Ashida , Miki Tomotani
IPC分类号： H01L2994
摘要： The present invention relates to a method of manufacturing a semiconductor device including steps of fabricating a capacitor. In a semiconductor device having a capacitor, the capacitor includes a lower electrode, a dielectric oxide film formed on the lower electrode, and an upper electrode formed the dielectric oxide film and formed of at least platinum in which oxygen is contained at a concentration of more than 1×1020 atoms/cm3. Accordingly, peeling of the upper electrode can be prevented and electric characteristics of the capacitor can be improved.
摘要翻译： 本发明涉及制造半导体器件的方法，包括制造电容器的步骤。 在具有电容器的半导体器件中，电容器包括下电极，形成在下电极上的电介质氧化膜，以及形成电介质氧化膜的上电极，至少形成铂，其中含有浓度更高的氧 超过1×1020原子/ cm3。 因此，可以防止上部电极的剥离，并且可以提高电容器的电特性。
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6.发明授权Water-soluble vitamin composition having excellent tablet properties and process for production thereof 失效具有优异片剂特性的水溶性维生素组合物及其生产方法
公开(公告)号：US5994324A
公开(公告)日：1999-11-30
申请号：US793748
申请日：1997-03-13
申请人： Hiroshi Ashida , Daisuke Izutsu , Akio Yamashita
发明人： Hiroshi Ashida , Daisuke Izutsu , Akio Yamashita
IPC分类号： A61K9/14 , A61K9/16 , A61K9/20 , A61K31/047 , A61K31/19 , A61K31/195 , A61K31/375 , A61K31/715 , A61K31/045 , A61K31/34
CPC分类号： A61K9/1623 , A61K31/375 , A61K9/1652 , A61K9/1688 , A61K9/2018 , A61K9/2095
摘要： There is disclosed a water-soluble vitamin composition which containing about 90 to 99.8% by weight of a water-soluble vitamin, a polymer binder and at least one additive selected from the group consisting of monosaccharides, disaccharides, sugar alcohols, dextrin and organic acids, which can provide a tablet having high mechanical strength (hardness) with less compression problem and easy disintegration, upon compression. A process for producing the composition is also disclosed.
摘要翻译： PCT No.PCT / JP96 / 03079 Sec。 371日期1997年3月13日 102（e）1997年3月13日PCT PCT 1996年10月23日PCT公布。 第WO98 / 09624号公报 日期1998年3月12日公开了一种水溶性维生素组合物，其含有约90〜99.8重量％的水溶性维生素，聚合物粘合剂和至少一种选自单糖，二糖，糖醇 ，糊精和有机酸，其可以在压缩时提供具有较低压缩问题和容易崩解的高机械强度（硬度）的片剂。 还公开了一种制备该组合物的方法。
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公开(公告)号：US08528377B2
公开(公告)日：2013-09-10
申请号：US12956276
申请日：2010-11-30
申请人： Koji Ohara , Hiroshi Ashida
发明人： Koji Ohara , Hiroshi Ashida
IPC分类号： B21D39/20
CPC分类号： B21D39/203 , B21D41/028 , F16L19/02
摘要： The invention provides a pipe expanding apparatus of a thin wall stainless steel pipe in which a strain is not generated in a flange and a yoke, even when a pipe expanding rubber swells. The invention includes a flange which forms one inclined surface of a chevron shaped projection portion by internally fitting a thin wall stainless steel pipe, a yoke which forms the other inclined surface of the chevron shaped projection portion by being coupled at its one end side to the flange, and is coupled to a cylinder at its other end side, a guide rod which is coupled to a piston of the cylinder, and a pipe expanding rubber which is pinched between a step portion of the guide rod and a backup ring and expands the thin wall stainless steel pipe.
摘要翻译： 本发明提供了一种薄壁不锈钢管的扩管装置，其中即使膨胀橡胶膨胀时，法兰和轭中也不产生应变。 本发明包括通过内部安装薄壁不锈钢管而形成人字形突出部分的一个倾斜表面的凸缘，通过在其一端侧连接形成人字形突起部的另一个倾斜表面的轭， 凸缘，并且在其另一端侧连接到气缸，连接到气缸的活塞的导杆和夹在导杆的台阶部分和支撑环之间的扩管橡胶， 薄壁不锈钢管。
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公开(公告)号：US07382643B2
公开(公告)日：2008-06-03
申请号：US11338889
申请日：2006-01-25
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： The magnetoresistive effect element comprises a pinned magnetic layer 16 having a multilayered synthetic antiferromagnet (SAF) structure, a nonmagnetic spacer layer 18 formed on the pinned magnetic layer 16, a free magnetic layer 20 formed on the nonmagnetic spacer layer 18 and formed of a single ferromagnetic layer, a nonmagnetic spacer layer 22 formed on the free magnetic layer 20, and a pinned magnetic layer 24 of a multilayered SAF structure formed on the nonmagnetic spacer layer 22, wherein a magnetization direction of the ferromagnetic layer 16c of the pinned magnetic layer 16, which is nearest the free magnetic layer 20, and a magnetization direction of the ferromagnetic layer 24a of the pinned magnetic layer 24, which is nearest the free magnetic layer 20, are opposite to each other.
摘要翻译： 磁阻效应元件包括具有多层合成反铁磁体（SAF）结构的钉扎磁性层16，形成在钉扎磁性层16上的非磁性间隔层18，形成在非磁性间隔层18上并由单个 铁磁层，形成在自由磁性层20上的非磁性间隔层22和形成在非磁性间隔层22上的多层SAF结构的钉扎磁性层24，其中被钉扎的磁性层的铁磁层16c的磁化方向 最靠近自由磁性层20的磁性层24的磁化方向与最靠近自由磁性层20的被钉扎磁性层24的磁化方向相反。
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公开(公告)号：US20070076469A1
公开(公告)日：2007-04-05
申请号：US11338889
申请日：2006-01-25
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： The magnetoresistive effect element comprises a pinned magnetic layer 16 having a multilayered synthetic antiferromagnet (SAF) structure, a nonmagnetic spacer layer 18 formed on the pinned magnetic layer 16, a free magnetic layer 20 formed on the nonmagnetic spacer layer 18 and formed of a single ferromagnetic layer, a nonmagnetic spacer layer 22 formed on the free magnetic layer 20, and a pinned magnetic layer 24 of a multilayered SAF structure formed on the nonmagnetic spacer layer 22, wherein a magnetization direction of the ferromagnetic layer 16c of the pinned magnetic layer 16, which is nearest the free magnetic layer 20, and a magnetization direction of the ferromagnetic layer 24a of the pinned magnetic layer 24, which is nearest the free magnetic layer 20, are opposite to each other.
摘要翻译： 磁阻效应元件包括具有多层合成反铁磁体（SAF）结构的钉扎磁性层16，形成在钉扎磁性层16上的非磁性间隔层18，形成在非磁性间隔层18上并由单个 铁磁层，形成在自由磁性层20上的非磁性间隔层22和形成在非磁性间隔层22上的多层SAF结构的钉扎磁性层24，其中被钉扎的磁性层的铁磁层16c的磁化方向 最靠近自由磁性层20的磁性层24的磁化方向与最靠近自由磁性层20的被钉扎磁性层24的磁化方向相反。
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10.发明申请Ferromagnetic tunnel junction, magnetic head using the same, magnetic recording device, and magnetic memory device 失效铁磁隧道结，使用磁头的磁头，磁记录装置和磁记忆装置公开(公告)号：US20060256484A1
公开(公告)日：2006-11-16
申请号：US11257397
申请日：2005-10-25
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B5/3909
摘要： A ferromagnetic tunnel junction is disclosed. The ferromagnetic tunnel junction includes a pinned magnetic layer, a tunnel insulating film formed on the pinned magnetic layer, and a free magnetic multilayer body formed on the tunnel insulating film. The free magnetic multilayer body includes a first free magnetic layer, a diffusion barrier layer, and a second free magnetic layer stacked in this order on the tunnel insulating film. The first free magnetic layer and the second free magnetic layer are ferromagnetically coupled with each other. The diffusion barrier layer inhibits the additive element contained in the first free magnetic layer from diffusing into the second free magnetic layer.
摘要翻译： 公开了铁磁隧道结。 铁磁隧道结包括钉扎磁性层，形成在钉扎磁性层上的隧道绝缘膜，以及形成在隧道绝缘膜上的自由磁性多层体。 自由磁性多层体包括在隧道绝缘膜上依次堆叠的第一自由磁性层，扩散阻挡层和第二自由磁性层。 第一自由磁性层和第二自由磁性层彼此铁磁耦合。 扩散阻挡层抑制包含在第一自由磁性层中的添加元素扩散到第二自由磁性层中。
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