Methods of forming a microelectronic structure are described. Embodiments of those methods include removing a portion of at least one of Si—C bonds and CHx bonds in a dielectric material comprising a porogen material by reaction with a wet chemical, wherein the portion of Si—C and CHx bonds are converted to Si—H bonds. The Si—H bonds may be further hydrolyzed to form SiOH linkages. The SiOH linkages may then be removed by a radiation based cure, wherein a portion of the porogen material is also removed.