发明申请
US20090325341A1 PRODUCTION METHOD OF THIN FILM TRANSISTOR USING AMORPHOUS OXIDE SEMICONDUCTOR FILM
有权
使用无定形氧化物半导体膜的薄膜晶体管的生产方法
- 专利标题: PRODUCTION METHOD OF THIN FILM TRANSISTOR USING AMORPHOUS OXIDE SEMICONDUCTOR FILM
- 专利标题(中): 使用无定形氧化物半导体膜的薄膜晶体管的生产方法
-
申请号: US12374665申请日: 2007-07-26
-
公开(公告)号: US20090325341A1公开(公告)日: 2009-12-31
- 发明人: Naho Itagaki , Toru Den , Nobuyuki Kaji , Ryo Hayashi , Masafumi Sano
- 申请人: Naho Itagaki , Toru Den , Nobuyuki Kaji , Ryo Hayashi , Masafumi Sano
- 申请人地址: JP Tokyo
- 专利权人: Canon Kabushiki Kaisha
- 当前专利权人: Canon Kabushiki Kaisha
- 当前专利权人地址: JP Tokyo
- 优先权: JP2006-226698 20060823
- 国际申请: PCT/JP2007/065114 WO 20070726
- 主分类号: H01L21/336
- IPC分类号: H01L21/336
摘要:
A production method of a thin film transistor including an active layer including an amorphous oxide semiconductor film, wherein a step of forming the active layer includes a first step of forming the oxide film in an atmosphere having an introduced oxygen partial pressure of 1×10−3 Pa or less, and a second step of annealing the oxide film in an oxidative atmosphere after the first step.