摘要:
An X-ray detector includes an X-ray photoelectric conversion layer configured to produce electric charges in proportion to X-ray irradiation incident on the layer, a collecting electrode configured to collect the electric charges produced by the X-ray photoelectric conversion layer, a common electrode disposed on a surface of the X-ray photoelectric conversion layer opposite to the collecting electrode, a storage capacitor configured to store the electric charges collected by the collecting electrode, and a readout unit configured to read out the electric charges stored in the storage capacitor. A voltage is to be applied between the collecting electrode and the common electrode. The X-ray photoelectric conversion layer is formed of a polycrystalline oxide.
摘要:
Provided is a bottom gate type thin film transistor including on a substrate (1) a gate electrode (2), a first insulating film (3) as a gate insulating film, an oxide semiconductor layer (4) as a channel layer, a second insulating film (5) as a protective layer, a source electrode (6), and a drain electrode (7), in which the oxide semiconductor layer (4) includes an oxide including at least one selected from the group consisting of In, Zn, and Sn, and the second insulating film (5) includes an amorphous oxide insulator formed so as to be in contact with the oxide semiconductor layer (4) and contains therein 3.8×1019 molecules/cm3 or more of a desorbed gas observed as oxygen by temperature programmed desorption mass spectrometry.
摘要翻译:提供了一种底栅型薄膜晶体管,其包括:基板(1),栅电极(2),作为栅极绝缘膜的第一绝缘膜(3),作为沟道层的氧化物半导体层(4),第二 作为保护层的绝缘膜(5),源电极(6)和漏电极(7),其中氧化物半导体层(4)包括含有选自In,Zn 和Sn,并且第二绝缘膜(5)包括形成为与氧化物半导体层(4)接触的非晶形氧化物绝缘体,并且其中包含观察为氧的解吸气体的3.8×1019分子/ cm 3以上 通过温度程序解吸质谱。
摘要:
Provided is a bottom gate type thin film transistor including on a substrate (1) a gate electrode (2), a first insulating film (3) as a gate insulating film, an oxide semiconductor layer (4) as a channel layer, a second insulating film (5) as a protective layer, a source electrode (6), and a drain electrode (7), in which the oxide semiconductor layer (4) includes an oxide including at least one selected from the group consisting of In, Zn, and Sn, and the second insulating film (5) includes an amorphous oxide insulator formed so as to be in contact with the oxide semiconductor layer (4) and contains therein 3.8×1019 molecules/cm3 or more of a desorbed gas observed as oxygen by temperature programmed desorption mass spectrometry.
摘要翻译:提供了一种底栅型薄膜晶体管,其包括:基板(1),栅电极(2),作为栅极绝缘膜的第一绝缘膜(3),作为沟道层的氧化物半导体层(4),第二 作为保护层的绝缘膜(5),源电极(6)和漏电极(7),其中氧化物半导体层(4)包括含有选自In,Zn 和Sn,并且第二绝缘膜(5)包括形成为与氧化物半导体层(4)接触的非晶形氧化物绝缘体,并且其中包含观察为氧的解吸气体的3.8×1019分子/ cm 3以上 通过温度程序解吸质谱。
摘要:
A method for manufacturing a field-effect transistor is provided. The field-effect transistor includes on a substrate a source electrode, a drain electrode, an oxide semiconductor layer, an insulating layer and a gate electrode. The method includes, after forming the insulating layer on the oxide semiconductor layer, an annealing step of increasing the electrical conductivity of the oxide semiconductor layers by annealing in an atmosphere containing moisture. The steam pressure at the annealing step is higher than the saturated vapor pressure in the atmosphere at the annealing temperature.
摘要:
A method for fabricating a device using an oxide semiconductor, including a process of forming the oxide semiconductor on a substrate and a process of changing the conductivity of the oxide semiconductor by irradiating a predetermined region thereof with an energy ray.
摘要:
A method for fabricating a device using an oxide semiconductor, including a process of forming the oxide semiconductor on a substrate and a process of changing the conductivity of the oxide semiconductor by irradiating a predetermined region thereof with an energy ray.
摘要:
Provided is a bottom gate type thin film transistor including on a substrate (1) a gate electrode (2), a first insulating film (3) as a gate insulating film, an oxide semiconductor layer (4) as a channel layer, a second insulating film (5) as a protective layer, a source electrode (6), and a drain electrode (7), in which the oxide semiconductor layer (4) includes an oxide including at least one selected from the group consisting of In, Zn, and Sn, and the second insulating film (5) includes an amorphous oxide insulator formed so as to be in contact with the oxide semiconductor layer (4) and contains therein 3.8×1019 molecules/cm3 or more of a desorbed gas observed as oxygen by temperature programmed desorption mass spectrometry.
摘要翻译:提供了一种底栅型薄膜晶体管,其包括:基板(1),栅电极(2),作为栅极绝缘膜的第一绝缘膜(3),作为沟道层的氧化物半导体层(4),第二 作为保护层的绝缘膜(5),源电极(6)和漏电极(7),其中氧化物半导体层(4)包括含有选自In,Zn 和Sn,并且第二绝缘膜(5)包括形成为与氧化物半导体层(4)接触的非晶形氧化物绝缘体,并且其中包含观察为氧的解吸气体的3.8×1019分子/ cm 3以上 通过温度程序解吸质谱。
摘要:
A method for forming a SnO-containing semiconductor film includes a first step of forming a SnO-containing film; a second step of forming an insulator film composed of an oxide or a nitride on the SnO-containing film to provide a laminated film including the SnO-containing film and the insulator film; and a third step of subjecting the laminated film to a heat treatment.
摘要:
A method for manufacturing a semiconductor device or apparatus having at least a semiconductor as a component, characterized by including irradiating the semiconductor with light having a longer wavelength than the absorption edge wavelength of the semiconductor to change the threshold voltage of the semiconductor device or apparatus, and checking the threshold voltage of the semiconductor device or apparatus, after or during irradiation with the light, to determine whether the threshold voltage is in a predetermined range, during manufacturing the semiconductor device or apparatus.
摘要:
An amorphous oxide semiconductor contains at least one element selected from In, Ga, and Zn at an atomic ratio of InxGayZnz, wherein the density M of the amorphous oxide semiconductor is represented by the relational expression (1) below: M≧0.94×(7.121x+5.941y+5.675z)/(x+y+z) (1) where 0≦x≦1, 0≦y≦1, 0≦z≦1, and x+y+z≠0.
摘要翻译:无定形氧化物半导体以In x Ga y Zn z的原子比含有选自In,Ga和Zn中的至少一种元素,其中非晶氧化物半导体的密度M由以下关系式(1)表示:M≥0.94×(7.121 x + 5.941y + 5.675z)/(x + y + z)(1)其中0≦̸ x≦̸ 1,0≦̸ y≦̸ 1,0和nlE; z≦̸ 1和x + y + z≠0。