发明申请
US20100002523A1 Flash Memory Devices that Utilize Age-Based Verify Voltages to Increase Data Reliability and Methods of Operating Same
有权
使用基于年龄的验证电压以提高数据可靠性的闪存设备和操作方法相同
- 专利标题： Flash Memory Devices that Utilize Age-Based Verify Voltages to Increase Data Reliability and Methods of Operating Same
- 专利标题（中）： 使用基于年龄的验证电压以提高数据可靠性的闪存设备和操作方法相同
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申请号： US12558717申请日： 2009-09-14
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公开(公告)号： US20100002523A1公开(公告)日： 2010-01-07
- 发明人: Ki-Tae Park , Yong-Seok Kim , Ki-Nam Kim , Yeong-Taek Lee
- 申请人： Ki-Tae Park , Yong-Seok Kim , Ki-Nam Kim , Yeong-Taek Lee
- 优先权： KR2006-116004 20061122
- 主分类号： G11C16/06
- IPC分类号： G11C16/06 ; G11C16/04
摘要：
Disclosed is a method of verifying a programmed condition of a flash memory device, being comprised of: determining a level of an additional verifying voltage in response to the number of programming/erasing cycles of memory cells; conducting a verifying operation to programmed memory cells with an initial verifying voltage lower than the additional verifying voltage; and selectively conducting an additional verifying operation with the additional verifying voltage to the program-verified memory cells in response to the number of programming/erasing cycles.
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