发明申请
US20100003181A1 Method For Forming Amorphous Silica-Based Coating Film With Low Dielectric Constant And Thus Obtained Amorphous Silica-Based Coating Film
有权
形成具有低介电常数的无定形二氧化硅基涂膜的方法,从而获得无定形二氧化硅基涂膜
- 专利标题: Method For Forming Amorphous Silica-Based Coating Film With Low Dielectric Constant And Thus Obtained Amorphous Silica-Based Coating Film
- 专利标题(中): 形成具有低介电常数的无定形二氧化硅基涂膜的方法,从而获得无定形二氧化硅基涂膜
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申请号: US12310486申请日: 2007-07-11
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公开(公告)号: US20100003181A1公开(公告)日: 2010-01-07
- 发明人: Miki Egami , Akira Nakashima , Michio Komatsu
- 申请人: Miki Egami , Akira Nakashima , Michio Komatsu
- 申请人地址: JP Kawasaki-shi, Kanagawa
- 专利权人: JGC CATALYSTS AND CHEMICALS LTD.
- 当前专利权人: JGC CATALYSTS AND CHEMICALS LTD.
- 当前专利权人地址: JP Kawasaki-shi, Kanagawa
- 优先权: JP2006-231202 20060828
- 国际申请: PCT/JP2007/063788 WO 20070711
- 主分类号: C01B33/12
- IPC分类号: C01B33/12 ; H01L21/316
摘要:
A method of forming on a substrate an amorphous silica-based coating film having a low dielectric constant of 3.0 or below and a film strength (Young's modulus) of 3.0 GPa or more, which comprises, as a typical one, the steps of; (a) coating on the substrate a liquid composition containing hydrolysate of an organic silicon compound or compounds hydrolyzed in the presence of tetraalkylammonium hydroxide (TAAOH); (b) setting the substrate in a chamber and then drying a coating film formed on the substrate at a temperature in the range from 25 to 340° C.; (c) heating the coating film at a temperature in the range from 105 to 450° C. with introduction of a superheated steam having such a temperature into the chamber, and (d) curing the coating film at a temperature in the range from 350 to 450° C. with introduction of a nitrogen gas into the chamber.
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