发明申请
- 专利标题： Method of light induced plating on semiconductors
- 专利标题（中）： 半导体光诱导电镀方法
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申请号： US12456790申请日： 2009-06-23
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公开(公告)号： US20100003817A1公开(公告)日： 2010-01-07
- 发明人: Gary Hamm , David L. Jacques
- 申请人： Gary Hamm , David L. Jacques
- 申请人地址： US MA Marlborough
- 专利权人： Rohm and Haas Electronic Materials LLC
- 当前专利权人： Rohm and Haas Electronic Materials LLC
- 当前专利权人地址： US MA Marlborough
- 主分类号： H01L21/3205
- IPC分类号： H01L21/3205
摘要：
Methods of light induced plating of nickel onto semiconductors are disclosed. The methods involve applying light at an initial intensity for a limited amount of time followed by reducing the intensity of the light for the remainder of the plating period to deposit nickel on a semiconductor.
公开/授权文献
- US07955977B2 Method of light induced plating on semiconductors 公开/授权日：2011-06-07
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