发明申请
US20100006833A1 THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME AND FLAT PANEL DISPLAY DEVICE HAVING THE SAME
有权
薄膜晶体管，其制造方法和具有该薄膜晶体管的平板显示器件
- 专利标题： THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME AND FLAT PANEL DISPLAY DEVICE HAVING THE SAME
- 专利标题（中）： 薄膜晶体管，其制造方法和具有该薄膜晶体管的平板显示器件
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申请号： US12393422申请日： 2009-02-26
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公开(公告)号： US20100006833A1公开(公告)日： 2010-01-14
- 发明人: Jae-Heung Ha , Young-Woo Song , Jong-Hyuk Lee , Jong-Han Jeong , Min-Kyu Kim , Yeon-Gon Mo , Jae-Kyeong Jeong , Hyun-Joong Chung , Kwang-Suk Kim , Hui-Won Yang , Chaun-Gi Choi
- 申请人： Jae-Heung Ha , Young-Woo Song , Jong-Hyuk Lee , Jong-Han Jeong , Min-Kyu Kim , Yeon-Gon Mo , Jae-Kyeong Jeong , Hyun-Joong Chung , Kwang-Suk Kim , Hui-Won Yang , Chaun-Gi Choi
- 申请人地址： KR Suwon-si
- 专利权人： Samsung Mobile Display Co., Ltd.
- 当前专利权人： Samsung Mobile Display Co., Ltd.
- 当前专利权人地址： KR Suwon-si
- 优先权： KR2008-66002 20080708
- 主分类号： H01L29/12
- IPC分类号： H01L29/12 ; H01L21/04
摘要：
A thin film transistor, a method of manufacturing the thin film transistor, and a flat panel display device including the thin film transistor. The thin film transistor includes: a gate electrode formed on a substrate; a gate insulating film formed on the gate electrode; an activation layer formed on the gate insulating film; a passivation layer including a compound semiconductor oxide, formed on the activation layer; and source and drain electrodes that contact the activation layer.
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