发明申请
- 专利标题: RAPID RECOVERY CIRCUIT
- 专利标题(中): 快速恢复电路
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申请号: US12513776申请日: 2008-06-04
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公开(公告)号: US20100007536A1公开(公告)日: 2010-01-14
- 发明人: Michiko Tokumaru , Heiji Ikoma
- 申请人: Michiko Tokumaru , Heiji Ikoma
- 优先权: JP2007-152839 20070608
- 国际申请: PCT/JP2008/001421 WO 20080604
- 主分类号: H03M1/00
- IPC分类号: H03M1/00 ; G05F3/02
摘要:
When a semiconductor circuit, in which a stabilizing capacitor 2 for stabilizing a reference voltage Vbias is connected to a reference voltage terminal RT, recovers from a power down state to an operational state, a current mirror circuit 40 provides current mirroring of a current Ia of a first current path Ph1, which generates an OFF threshold voltage ref1 of a hysteresis comparator 1, to generate a current Ib of a second current path Ph2, which generates the reference voltage Vbias. The reference voltage Vbias is input to the comparator 1 as an input voltage vin. When the reference voltage Vbias becomes equal to the OFF threshold voltage ref1, the comparator 1 immediately stops the charging of the stabilizing capacitor 2 by a current source I1.
公开/授权文献
- US07924188B2 Rapid recovery circuit 公开/授权日:2011-04-12
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