发明申请
US20100014202A1 Control Circuit for a Power Field-Effect Transistor and Method for Configuring a Control Circuit for a Power Field-Effect Transistor
有权
用于功率场效应晶体管的控制电路和用于配置功率场效应晶体管的控制电路的方法
- 专利标题： Control Circuit for a Power Field-Effect Transistor and Method for Configuring a Control Circuit for a Power Field-Effect Transistor
- 专利标题（中）： 用于功率场效应晶体管的控制电路和用于配置功率场效应晶体管的控制电路的方法
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申请号： US12175049申请日： 2008-07-17
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公开(公告)号： US20100014202A1公开(公告)日： 2010-01-21
- 发明人: Ralf Forster , Marco Well , Gunther Wolfarth
- 申请人： Ralf Forster , Marco Well , Gunther Wolfarth
- 主分类号： H02H3/20
- IPC分类号： H02H3/20 ; H03H11/24 ; H02H3/24
摘要：
An integrated circuit has a control circuit (2) for a power field-effect transistor (3), wherein the integrated circuit has a first input (202) for receiving a control signal (CE) and an output to switch the field-effect transistor (3) on or off. The control circuit further has a driver circuit for providing a voltage level at the output in response of the control signal. A second input is provided for receiving a configuration signal, the configuration signal for configuring the voltage level being provided by the driver circuit in response to the control signal.
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